AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary V 1000V 150 The AOTF4N90 is fabricated using an advanced high DS voltage MOSFET process that is designed to deliver high I (at V =10V) 4A D GS levels of performance and robustness in popular AC-DC R (at V =10V) < 3.6 DS(ON) GS applications.By providing low R , C and C along DS(on) iss rss with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOTF4N90L Top View D TO-220F G S D S G AOTF4N90 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOTF4N90 Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 990000 VV DS Gate-Source Voltage V 30 V GS T =25C 4* C Continuous Drain I D T =100C Current 2.5* A C C Pulsed Drain Current I 16 DM C Avalanche Current I 2.3 A AR C Repetitive avalanche energy E 79 mJ AR G Single plused avalanche energy E 158 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C W 37 C P D B o o Power Dissipation Derate above 25 C 0.3 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol AOTF4N90 Units A,D Maximum Junction-to-Ambient R 65 C/W JA Maximum Junction-to-Case R 3.3 C/W JC * Drain current limited by maximum junction temperature. Rev1: Jul 2011 www.aosmd.com Page 1 of 5 AOTF4N90 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 900 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 1000 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V 1 D GS V/ C Coefficient /TJ V =900V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =720V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 n GSS DS GS V V =5V I =250A Gate Threshold Voltage 3.4 4.1 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =2A 2.8 3.6 GS D DS(ON) V =40V, I =2A g Forward Transconductance 6 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 4 A S I Maximum Body-Diode Pulsed Current 16 A SM DYNAMIC PARAMETERS C Input Capacitance 580 728 880 pF iss C Output Capacitance V =0V, V =25V, f=1MHz 41 52 70 pF GS DS oss C Reverse Transfer Capacitance 4.4 5.5 9 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2 4 6 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 14.5 18.4 22 nC g Q Gate Source Charge V =10V, V =720V, I =4A 3.5 4.4 5.3 nC GS DS D gs Q Gate Drain Charge 6.4 8 12 nC gd t Turn-On DelayTime 22 ns D(on) t Turn-On Rise Time V =10V, V =450V, I =4A, 46 ns GS DS D r R =25 t Turn-Off DelayTime G 43 ns DD((ooffff)) t Turn-Off Fall Time 39 ns f t I =4A,dI/dt=100A/s,V =100V 155 196 235 rr Body Diode Reverse Recovery Time F DS ns Q I =4A,dI/dt=100A/s,V =100V 3.2 4.05 4.9 C rr Body Diode Reverse Recovery Charge F DS A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =2.3A, V =150V, R =25 , Starting T =25 C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev1: Jul 2011 www.aosmd.com Page 2 of 5