AOTF9N90 900V, 9A N-Channel MOSFET General Description Product Summary V 1000V 150 The AOTF9N90 has been fabricated using an advanced DS high voltage MOSFET process that is designed to deliver I (at V =10V) 9A D GS high levels of performance and robustness in popular AC- R (at V =10V) < 1.3 DS(ON) GS DC applications.By providing low R , C and C DS(on) iss rss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g For Halogen Free add suffix to part number: AOTF9N90L Top View D TO-220F G S S D G AOTF9N90 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol AOTF9N90 Units Drain-Source Voltage V 900 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 3300 VV GS T =25C 9* C Continuous Drain I D Current T =100C 6* A C C Pulsed Drain Current I 34 DM C Avalanche Current I 3.6 A AR C Repetitive avalanche energy E 194 mJ AR G Single pulsed avalanche energy E 388 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C 50 W C P B D o o Power Dissipation Derate above 25 C 0.4 W/ C Junction and Storage Temperature Range T , T -55 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol AOTF9N90 Units A,D Maximum Junction-to-Ambient R 65 C/W JA Maximum Junction-to-Case R 2.5 C/W JC * Drain current limited by maximum junction temperature. www.aosmd.com Rev0: Oct 2012 Page 1 of 5 AOTF9N90 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 900 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 1000 V D GS J BV Breakdown Voltage Temperature DSS o I =250A, V =0V D GS 0.9 V/ C Coefficient /TJ V =900V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =720V, T =125C 10 DS J I V =0V, V =30V Gate-Body leakage current 100 n GSS DS GS V V =5V, I =250A 3.4 4 4.5 V Gate Threshold Voltage GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =4.5A 1 1.3 GS D DS(ON) V =40V, I =4.5A g Forward Transconductance 13 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD I Maximum Body-Diode Continuous Current 9 A S I Maximum Body-Diode Pulsed Current 34 A SM DYNAMIC PARAMETERS C Input Capacitance 1700 2130 2560 pF iss V =0V, V =25V, f=1MHz C Output Capacitance 100 152 200 pF GS DS oss C Reverse Transfer Capacitance 8 14 20 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.3 2.0 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 35 46 58 nC g V =10V, V =720V, I =9A Q Gate Source Charge 9.5 nC GS DS D gs Q Gate Drain Charge 20.5 nC gd t Turn-On DelayTime 45 ns D(on) t Turn-On Rise Time V =10V, V =450V, I =9A, 80 ns GS DS D r RR ==2255 tt TTuurrnn--OOffff DDeellaayyTTiimmee GG 111166 nnss DD((ooffff)) t Turn-Off Fall Time 60 ns f t I =9A,dI/dt=100A/s,V =100V rr Body Diode Reverse Recovery Time F DS 450 568 690 ns Q I =9A,dI/dt=100A/s,V =100V C rr Body Diode Reverse Recovery Charge F DS 6.0 7.8 10.0 A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C, Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. L=60mH, I =3.6A, V =150V, R =25 , Starting T =25 C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: Oct 2012 www.aosmd.com Page 2 of 5