AOW2502 150V N-Channel MOSFET General Description Product Summary V Trench Power MV MOSFET technology DS 150V Low R I (at V =10V) 106A DS(ON) D GS Low Gate Charge R (at V =10V) < 10.7m DS(ON) GS Optimized for fast-switching applications Applications 100% UIS Tested 100% Rg Tested Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications TO-262 D Bottom View Top View G S Orderable Part Number Package Type Form Minimum Order Quantity TO-262 AOW2502 Tube 1000 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 115500 VV DS Gate-Source Voltage V 20 V GS T =25C 106 C Continuous Drain I D Current T =100C 67 A C C Pulsed Drain Current I 250 DM T =25C 16 A Continuous Drain I A DSM T =70C Current 13 A C Avalanche Current I 40 A AS C Avalanche energy L=0.3mH E 240 mJ AS V Spike 10s V 180 V DS SPIKE T =25C 277 C P W D B T =100C Power Dissipation 111 C T =25C 6.2 A P W DSM A Power Dissipation T =70C 4.0 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 15 20 C/W R A D JA Steady-State Maximum Junction-to-Ambient 55 65 C/W Maximum Junction-to-Case Steady-State R 0.35 0.45 C/W JC Rev.1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, VGS=0V BV Drain-Source Breakdown Voltage 150 V DSS D V =150V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 3.5 4.3 5.1 V GS(th) DS GS, D V =10V, I =20A 8.9 10.7 GS D R Static Drain-Source On-Resistance m DS(ON) TO-220 T =125C 17.3 21 J V =5V, I =20A g Forward Transconductance 50 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 106 A S DYNAMIC PARAMETERS C Input Capacitance 3010 pF iss V =0V, V =75V, f=1MHz C Output Capacitance 345 pF oss GS DS C Reverse Transfer Capacitance 14 pF rss R Gate resistance f=1MHz 1 2 3 g SWITCHING PARAMETERS Q (10V) Total Gate Charge 43 60 nC g V =10V, V =75V, I =20A Q Gate Source Charge 18 nC gs GS DS D Q Gate Drain Charge 10 nC gd t Turn-On DelayTime 19 ns D(on) t Turn-On Rise Time V =10V, V =75V, R =3.75, 24 ns r GS DS L R =3 t Turn-Off DelayTime 30 ns GEN D(off) t Turn-Off Fall Time 8.5 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 75 ns QQ II ==2200AA,, ddII//ddtt==550000AA//ss nnCC rrrr BBooddyy DDiiooddee RReevveerrssee RReeccoovveerryy CChhaarrggee FF 888800 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R t 10s and the maximum allowed junction temperature of 150 C. The value in any given application DSM JA depends on the user s specific board design, and the maximum temperature of 150 C may be used if the PCB allows it. B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: December 2014 www.aosmd.com Page 2 of 6