X-On Electronics has gained recognition as a prominent supplier of 9018M-G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 9018M-G Bipolar Transistors - BJT are a product manufactured by Blue Rocket. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

9018M-G Blue Rocket

9018M-G electronic component of Blue Rocket
9018M-G Blue Rocket
9018M-G Bipolar Transistors - BJT
9018M-G  Semiconductors

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See Product Specifications
Part No. 9018M-G
Manufacturer: Blue Rocket
Category: Bipolar Transistors - BJT
Description: 50nA 15V 310mW 50mA 72@1mA,5V 1100MHz 500mV@10mA,1mA NPN +150℃@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0357 ea
Line Total: USD 0.71 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
   
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We are delighted to provide the 9018M-G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 9018M-G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This is a SOT-23 bipolar transistor (BJT) manufactured by Blue Rocket and is compliant with the Restriction of Hazardous Substances (RoHS) Directive. It has an NPN structure and has a maximum junction temperature rating of +150°C (Tj). It has a collector current rating of 50mA, a base current rating of 1mA, a power dissipation of 310mW, a DC current gain of 72@1mA, a voltage of 5V, and a frequency of 1100MHz. The transistor has a maximum collector-emitter voltage (Vce) rating of 15V and a maximum emitter-base voltage (Veb) rating of 500mV@10mA. The collector-emitter saturation voltage (Vce(sat)) rating is 50nA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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