TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE TIP33 Series (TOP VIEW) 80 W at 25C Case Temperature B 1 10 A Continuous Collector Current C 2 15 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP34 -80 TIP34A -100 Collector-base voltage (I = 0) V V E CBO TIP34B -120 TIP34C -140 TIP34 -40 TIP34A -60 Collector-emitter voltage (I = 0) V V B CEO TIP34B -80 TIP34C -100 Emitter-base voltage V -5 V EBO Continuous collector current I -10 A C Peak collector current (see Note 1) I -15 A CM Continuous base current I -3 A B Continuous device dissipation at (or below) 25C case temperature (see Note 2) P 80 W tot Continuous device dissipation at (or below) 25C free air temperature (see Note 3) P 3.5 W tot 2 Unclamped inductive load energy (see Note 4) LI 62.5 mJ C Operating junction temperature range T -65 to +150 C j Storage temperature range T -65 to +150 C stg Lead temperature 3.2 mm from case for 10 seconds T 250 C L NOTES: 1. This value applies for t 0.3 ms, duty cycle 10%. p 2. Derate linearly to 150C case temperature at the rate of 0.64 W/C. 3. Derate linearly to 150C free air temperature at the rate of 28 mW/C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I = -0.4 A, R = 100 , B(on) BE V = 0, R = 0.1 , V = -20 V. BE(off) S CC JULY 1968 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.TIP34, TIP34A, TIP34B, TIP34C PNP SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TIP34 -40 Collector-emitter TIP34A -60 V I = -30 mA I = 0 V (BR)CEO C B breakdown voltage TIP34B -80 (see Note 5) TIP34C -100 V = -80 V V =0 TIP34 -0.4 CE BE Collector-emitter V = -100 V V =0 TIP34A -0.4 CE BE I mA CES cut-off current V = -120 V V =0 TIP34B -0.4 CE BE V = -140 V V =0 TIP34C -0.4 CE BE Collector cut-off V = -30 V I =0 TIP34/34A -0.7 CE B I mA CEO current V = -60 V I =0 TIP34B/34C -0.7 CE B Emitter cut-off I V = -5 V I =0 -1 mA EBO EB C current Forward current V = -4 V I = - 1A 40 CE C h (see Notes 5 and 6) FE transfer ratio V = -4 V I = -3 A 20 100 CE C Collector-emitter I = -0.3 A I = -3 A -1 B C V (see Notes 5 and 6) V CE(sat) saturation voltage I = -2.5 A I = -10A -4 B C Base-emitter V = -4 V I = -3 A -1.6 CE C V (see Notes 5 and 6) V BE voltage V = -4 V I = -10 A -3 CE C Small signal forward h V = -10 V I =-0.5 A f = 1 kHz 20 fe CE C current transfer ratio Small signal forward h V = -10 V I =-0.5 A f = 1 MHz 3 fe CE C current transfer ratio NOTES: 5. These parameters must be measured using pulse techniques, t = 300 s, duty cycle 2%. p 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 1.56 C/W JC R Junction to free air thermal resistance 35.7 C/W JA resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t Turn-on time I = -6 A I = -0.6 A I = 0.6 A 0.4 s on C B(on) B(off) t Turn-off time V = 4 V R = 5 t = 20 s, dc 2% 0.7 s off BE(off) L p Voltage and current values shown are nominal exact values vary slightly with transistor parameters. JULY 1968 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.