ASML-5829 Schottky Assisted Low Power PIN Diode Limiter Data Sheet Description Features The ASML-5829 is specifically designed for low power Low Power Limiter with unique combination of PIN and limiter applications, where it can be used to protect the Schottky Diode receiver system from being damaged by large input Low limiting threshold power (OP1dB: 6.05 dBm signals, and allow the receiver system to function normally 900MHz) with the absence of large signal. The Schottky enhanced Semi integrated solution in Surface Mount SOT-323 limiter will have a lower limiting threshold compared to Package the more conventional self-biased PIN limiter. The PIN diode is placed at the input, to protect the Schottky from increase flexibility high RF power levels. save board space reduce cost PIN Diode features: Pin Connections, Package Marking & Orientation, Low Capacitance SOT-323 Low Resistance at Low Current 1 Low Failure in Time (FIT) Rate Schottky Diode features: PIN Diode Schottky Diode Low Turn-On Voltage (As Low as 0.34 V at 1 mA) 1 Low FIT (Failure in Time) Rate Note: 1. For more information see the Surface Mount PIN Reliability Data Sheet. GB Notes: GB = Device Code = Month code indicates the month of manufacture 1 Table 1. Absolute Maximum Rating Tc = +25C, PIN diode Absolute Max. Absolute Max. Symbol Parameter Units for PIN Diode for Schottky Diode I Forward Current (1s Pulse) Amp 1 1 F P Peak Inverse Voltage V 100 15 IV T Junction Temperature C 150 J T Storage Temperature C -65 to 150 STG 2 Thermal Resistance C/W 150 JC Notes: 1. Operation in excess of anyone of these conditions may result in permanent damage to the device. 2. T = 25C, T where is defined to be the temperature at the package pins where contacts is made to the circuit board. C C Table 2. Electrical Specifications, Tc = +25C, PIN diode Symbol Parameter and Test Condition Units Min. Typ Max. V Breakdown Voltage I 10A V 100 128 BR R V Forward Voltage I = 30mA V 0.90 F F R Typical Series Resistance Freq = 100MHz & I = 1mA Ohm 4.00 S F R Typical Series Resistance Freq = 100MHz & I = 5mA Ohm 1.90 2.5 S F C Typical Total Capacitance Freq = 1MHz & V = 5V pF 0.28 0.375 T R Carrier Lifetime I =10mA & I = 6mA ns 200 F R Table 3. Electrical Specifications, Tc = +25C, Schottky diode Symbol Parameter and Test Condition Units Min. Typ Max. V Breakdown Voltage I 100A V 15 22 BR R I Reverse Leakage Current V = 1V nA 40 100 R BR V Forward Voltage I = 1mA V 0.32 0.34 F F V Forward Voltage I = 10mA V 0.45 0.50 F F C Typical Total Capacitance Freq = 1MHz & V = 0V pF 0.7 1.0 T R RD Typical Dynamic Resistance, I = 5mA Ohm 12 F 2