BAS28
www.centralsemi.com
SURFACE MOUNT SILICON
DUAL, ISOLATED HIGH SPEED
DESCRIPTION:
SWITCHING DIODES
The CENTRAL SEMICONDUCTOR BAS28 consists
of two electrically isolated ultra-high speed silicon
switching diodes manufactured by the epitaxial planar
process and packaged in an epoxy molded SOT-143
surface mount case. This device is designed for high
speed switching applications.
MARKING CODE: A61 or JTW
SOT-143 CASE
MAXIMUM RATINGS: (T =25C) SYMBOL UNITS
A
Continuous Reverse Voltage V 75 V
R
Peak Repetitive Reverse Voltage V 85 V
RRM
Continuous Forward Current I 250 mA
F
Peak Repetitive Forward Current I 500 mA
FRM
Peak Forward Surge Current, tp=1.0s I 4.0 A
FSM
Peak Forward Surge Current, tp=1.0ms I 2.0 A
FSM
Peak Forward Surge Current, tp=1.0s I 1.0 A
FSM
Power Dissipation P 350 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
Thermal Resistance 357 C/W
JA
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted)
A
SYMBOL TEST CONDITIONS MIN MAX UNITS
I V =25V, T=150C 30 A
R R A
I V=75V 1.0 A
R R
I V =75V, T=150C 50 A
R R A
V I=1.0mA 715 mV
F F
V I=10mA 855 mV
F F
V I=50mA 1.00 V
F F
V I=150mA 1.25 V
F F
C V =0, f=1.0MHz 2.0 pF
J R
t I =I =10mA, I =1.0mA, R =100 6.0 ns
rr F R rr L
Q I =10mA, V =5.0V, R=500 45 pC
s F R L
V I =10mA, t=20ns 1.75 V
FR F r
R8 (19-September 2018)BAS28
SURFACE MOUNT SILICON
DUAL, ISOLATED HIGH SPEED
SWITCHING DIODES
SOT-143 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
DIMENSIONS
INCHES MILLIMETERS
SYMBOL MIN MAX MIN MAX
A 0.003 0.008 0.08 0.20
B0.006 - 0.15 -
C 0.000 0.005 0.01 0.13
D 0.035 0.045 0.89 1.14
E 0.110 0.120 2.79 3.04
F 0.075 1.90
G 0.083 0.102 2.10 2.60
H 0.047 0.055 1.19 1.40
LEAD CODE:
J 0.012 0.020 0.30 0.50
1) Cathode D1
K 0.030 0.037 0.76 0.93
2) Cathode D2
L 0.067 1.70
3) Anode D2
SOT-143 (REV: R3)
4) Anode D1
MARKING CODE: A61 or JTW
R8 (19-September 2018)
www.centralsemi.com