TM BRX44 BRX47 Central BRX45 BRX48 BRX46 BRX49 Semiconductor Corp. SILICON CONTROLLED RECTIFIER DESCRIPTION: 0.8 AMP, 30 THRU 400 VOLTS The CENTRAL SEMICONDUCTOR BRX44 series types are PNPN Silicon Controlled Rectifiers manufactured in a TO-92 case, designed for control systems and sensing circuit applications. MARKING CODE: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL BRX44 BRX45 BRX46 BRX47 BRX48 BRX49 UNITS Peak Repetitive Off-State Voltage V V 30 60 100 200 300 400 V DRM, RRM RMS On-State Current (T =40C) I 0.8 A C T(RMS) Average On-State Current (T =40C) I 0.5 A C T(AV) Nonrept. On-State Current (T =60C) I 10 A C TSM 2 2 Fusing Current (t=10ms) I t 0.24 A s Peak Reverse Gate Voltage (I =10A) V 8.0 V GR GRM Peak Gate Current (t=10s) I 1.0 A GM Peak Gate Dissipation (t=10s) P 2.0 W GM Gate Dissipation (t=20ms) P 0.1 W G (AV) Operating and Storage Junction Temperature T T -40 to +125 C J, stg Thermal Resistance 100 C/W JC Thermal Resistance 200 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I I Rated V V R =1.0K, T =25C 1.0 A DRM, RRM DRM, RRM, GK C I I Rated V , V , R =1.0K, T =125C 0.1 mA DRM, RRM DRM RRM GK C V I =1.0A 1.7 V TM T I V =6.0V, R =10 200 A GT D L V V =6.0V, R =10 0.8 V GT D L I R =1.0K 5.0 mA H GK I R =1.0K 6.0 mA L GK dv/dt V =0.67V x V R =1.0K, T =125C 100 V/s D DRM, GK C di/dt I = 10mA, di /dt=0.1A/s T =125C 30 A/s G G , C R0 (27-April 2004)TM BRX44 BRX47 BRX45 BRX48 Central BRX46 BRX49 Semiconductor Corp. SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 400 VOLTS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: DIMENSIONS 1) ANODE INCHES MILLIMETERS 2) GATE SYMBOL MIN MAX MIN MAX A (DIA) 0.175 0.205 4.45 5.21 3) CATHODE B 0.170 0.210 4.32 5.33 C 0.500 - 12.70 - D 0.016 0.022 0.41 0.56 MARKING CODE: E 0.100 2.54 FULL PART NUMBER F 0.050 1.27 G 0.125 0.165 3.18 4.19 H 0.080 0.105 2.03 2.67 I 0.015 0.38 TO-92 (REV: R1) R0 (27-April 2004)