CLL2003 TR Central Semiconductor

CLL2003 www.centralsemi.com SURFACE MOUNT HIGH VOLTAGE SILICON DESCRIPTION: SWITCHING DIODE The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 250 V R Peak Repetitive Reverse Voltage V 250 V RRM Average Forward Current I 200 mA O Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 500 mW D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 350 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=200V 100 nA R R I V =200V, T=150C 100 A R R A BV I=100A 250 V R R V I=100mA 1.00 V F F V I=200mA 1.25 V F F C V =0, f=1.0 MHz 5.0 pF T R t I =I =30mA, Rec. to 3.0mA, rr F R R=100 50 ns L R3 (8-January 2010)CLL2003 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SOD-80 CASE - MECHANICAL OUTLINE MARKING: CATHODE BAND R3 (8-January 2010) www.centralsemi.com