CMDD2004 TR Central Semiconductor

CMDD2004 www.centralsemi.com SURFACE MOUNT HIGH VOLTAGE DESCRIPTION: SILICON SWITCHING DIODE The Central Semiconductor CMDD2004 is a high voltage silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for applications requiring high voltage capability. MARKING CODE: C24 SOD-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 250 V R Peak Repetitive Reverse Voltage V 300 V RRM Peak Repetitive Reverse Current I 200 mA O Continuous Forward Current I 225 mA F Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +175 C J stg Thermal Resistance 600 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNIT I V=240V 100 nA R R I V =240V, T=150C 100 A R R A BV I=100A 300 V R R V I=100mA 1.0 V F F C V =0, f=1.0MHz 5.0 pF T R t I =I =30mA, I =3.0mA, R=100 50 ns rr F R rr L R6 (24-June 2011)CMDD2004 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: C24 R6 (24-June 2011) www.centralsemi.com