CMDD3003TR

CMDD3003 www.centralsemi.com SURFACE MOUNT LOW LEAKAGE SILICON DESCRIPTION: SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMDD3003 type is a silicon switching diode manufactured by the epitaxial planar process, epoxy molded in a TM SUPERmini surface mount package, designed for switching applications requiring a extremely low leakage diode. MARKING CODE: 03C SOD-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 180 V R Average Rectified Current I 200 mA O Continuous Forward Current I 600 mA F Peak Repetitive Forward Current I 700 mA FRM Peak Forward Surge Current, tp=1.0s I 2.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=125V 1.0 nA R R I V =125V, T=150C 3.0 A R R A I V =180V 10 nA R R I V =180V, T=150C 5.0 A R R A BV I=5.0A 200 V R R V I=1.0mA 0.62 0.72 V F F V I=10mA 0.72 0.83 V F F V I=50mA 0.80 0.89 V F F V I=100mA 0.83 0.93 V F F V I=200mA 0.87 1.10 V F F V I=300mA 0.90 1.15 V F F C V =0, f=1.0MHz 4.0 pF T R R1 (8-January 2010)CMDD3003 SURFACE MOUNT LOW LEAKAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: 03C R1 (8-January 2010) www.centralsemi.com