CMDD6001 TR Central Semiconductor

CMDD6001 www.centralsemi.com SURFACE MOUNT ULTRA LOW LEAKAGE DESCRIPTION: SILICON SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMDD6001 type is a silicon switching diode manufactured by the epitaxial TM planar process, epoxy molded in a SUPERmini surface mount package, designed for switching applications requiring a extremely low leakage diode. MARKING CODE: C61 SOD-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 100 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 250 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 250 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 500 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=75V 500 pA R R BV I=100A 100 V R R V I=1.0mA 0.85 V F F V I=10mA 0.95 V F F V I=100mA 1.1 V F F C V =0, f=1.0MHz 2.0 pF T R t I =I =10mA, I =1.0mA, R=100 3.0 s rr R F rr L R5 (9-May 2011)CMDD6001 SURFACE MOUNT ULTRA LOW LEAKAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: C61 R5 (9-May 2011) www.centralsemi.com