CMHD2003 TR Central Semiconductor

CMHD2003 www.centralsemi.com SURFACE MOUNT HIGH VOLTAGE SILICON DESCRIPTION: SWITCHING DIODE The CENTRAL SEMICONDUCTOR CMHD2003 is a Silicon Switching Diode, manufactured by the epitaxial planar process, epoxy molded in a SOD-123 surface mount package, designed for applications requiring high voltage capability. MARKING CODE: C03 SOD-123 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 250 V R Continuous Forward Current I 250 mA F Average Rectified Current I 200 mA O Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp<1.0s (T=25C) I 1.0 A C FSM Power Dissipation P 400 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 312.5 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=200V 100 nA R R I V =200V, T=100C 15 A R R C V I=100mA 1.0 V F F C V =0, f=1.0MHz 1.5 pF T R t I =I =30mA, R =100, Rec. to 3.0mA 50 ns rr F R L R5 (5-August 2010)CMHD2003 SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE SOD-123 CASE - MECHANICAL OUTLINE LEAD CODE 1) Cathode 2) Anode MARKING CODE: C03 R5 (5-August 2010) www.centralsemi.com