CMPD7000E ENHANCED SPECIFICATION www.centralsemi.com SURFACE MOUNT DESCRIPTION: DUAL, IN SERIES The CENTRAL SEMICONDUCTOR CMPD7000E is SILICON SWITCHING DIODES an Enhanced version of the CMPD7000 Dual, Series Configuration, Ultra-High Speed Switching Diode. This device is manufactured by the epitaxial planar process, in an epoxy molded surface mount SOT-23 package, designed for high speed switching applications. MARKING CODE: C5CE FEATURED ENHANCED SPECIFICATIONS: SOT-23 CASE BV from 100V min to 120V min. R V from 1.1V max to 1.0V max. F MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 120 V RRM Average Forward Current I 200 mA O Peak Forward Current I 500 mA FM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=50V 300 nA R R I V =50V, T=125C 100 A R R A I V=100V 500 nA R R BV I=100A 120 150 V R R V I=1.0mA 0.55 0.59 0.65 V F F V I=10mA 0.67 0.72 0.77 V F F V I=100mA 0.85 0.91 1.0 V F F C V =0, f=1.0MHz 1.5 2.6 pF T R t I =I =10mA, R =100, Rec. to 1.0mA 2.0 4.0 ns rr R F L Enhanced Specification R4 (27-January 2010)CMPD7000E ENHANCED SPECIFICATION SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: C5CE R4 (27-January 2010) www.centralsemi.com