CMPD7000 TR Central Semiconductor

CMPD7000 www.centralsemi.com SURFACE MOUNT DUAL, IN SERIES DESCRIPTION: SILICON SWITCHING DIODES The CENTRAL SEMICONDUCTOR CMPD7000 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package, connected in a series configuration, designed for high speed switching applications. MARKING CODE: C5C SOT-23 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Repetitive Reverse Voltage V 100 V RRM Average Forward Current I 200 mA O Peak Forward Current I 500 mA FM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=50V 300 nA R R I V =50V, T=125C 100 A R R A I V=100V 500 nA R R BV I=100A 100 V R R V I=1.0mA 0.55 0.70 V F F V I=10mA 0.67 0.82 V F F V I=100mA 0.75 1.10 V F F C V =0, f=1.0MHz 1.5 2.6 pF T R t I =I =10mA, R =100, Rec. to 1.0mA 2.0 4.0 ns rr R F L R7 (27-January 2010)CMPD7000 SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: C5C R7 (27-January 2010) www.centralsemi.com