CMSD2004S www.centralsemi.com SURFACE MOUNT DUAL, IN SERIES DESCRIPTION: SILICON SWITCHING DIODES The CENTRAL SEMICONDUCTOR CMSD2004S type is a dual, in series silicon switching diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. MARKING CODE: B6D SOT-323 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 300 V R Peak Repetitive Reverse Voltage V 300 V RRM Peak Repetitive Reverse Current I 200 mA RRM Continuous Forward Current I 225 mA F Peak Repetitive Forward Current I 625 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 275 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 455 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=240V 100 nA R R I V =240V, T=150C 100 A R R A BV I=100A 300 V R R V I=100mA 1.0 V F F C V =0, f=1.0MHz 5.0 pF T R t I =I =30mA, I =3.0mA, R=100 50 ns rr F R rr L R6 (8-February 2010)CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES SOT-323 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 MARKING CODE: B6D R6 (8-February 2010) www.centralsemi.com