CMXD6001 TR Central Semiconductor

CMXD6001 SURFACE MOUNT www.centralsemi.com TRIPLE ISOLATED DESCRIPTION: ULTRA LOW LEAKAGE The CENTRAL SEMICONDUCTOR CMXD6001 type SILICON SWITCHING DIODES contains three (3) Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, and designed for switching applications requiring extremely low leakage. MARKING CODE: X01 SOT-26 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Continuous Reverse Voltage V 75 V R Peak Repetitive Reverse Voltage V 100 V RRM Continuous Forward Current I 250 mA F Peak Repetitive Forward Current I 250 mA FRM Peak Forward Surge Current, tp=1.0s I 4.0 A FSM Peak Forward Surge Current, tp=1.0s I 1.0 A FSM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V=75V 500 pA R R BV I=100A 100 V R R V I=1.0mA 0.85 V F F V I=10mA 0.95 V F F V I=100mA 1.1 V F F C V =0, f=1.0MHz 2.0 pF T R t I =I =10mA, I =1.0mA, R=100 3.0 s rr R F rr L R4 (9-May 2011)CMXD6001 SURFACE MOUNT TRIPLE ISOLATED ULTRA LOW LEAKAGE SILICON SWITCHING DIODES SOT-26 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Anode D1 2) Anode D2 3) Anode D3 4) Cathode D3 5) Cathode D2 6) Cathode D1 MARKING CODE: X01 R4 (9-May 2011) www.centralsemi.com