CTLTVS12 TR Central Semiconductor

CTLTVS12 www.centralsemi.com SURFACE MOUNT SILICON UNI-DIRECTIONAL DESCRIPTION: TRANSIENT VOLTAGE SUPPRESSOR The CENTRAL SEMICONDUCTOR CTLTVS12 is a low leakage, fast response TVS packaged in an ultra small, ultra low profile surface mount package. This device is designed to protect sensitive equipment against ESD damage. MARKING CODE: O TLM2D3D6 CASE APPLICATIONS: FEATURES: PDAs Ultra Small, Ultra Low Profile 0.3mm x 0.6mm x 0.3mm Memory Card Ports Leadless Surface Mount package Cellular Phones Low Capacitance Instrumentation Low Leakage Current MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Power Dissipation (8x20s) P 35 W PK Electrical Fast Transient (IEC 61000-4-4) (5x50ns) EFT 40 A ESD Voltage (IEC 61000-4-2, Air) V 30 kV ESD ESD Voltage (IEC 61000-4-2, Contact) V 30 kV ESD Operating and Storage Junction Temperature T , T -55 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) V =1.0V MAX I =10mA A F F Maximum Maximum Maximum Typical Typical Typical Typical Reverse Breakdown Test Reverse Clamping TLP Clamping Dynamic Junction Junction Stand-off Voltage Current Leakage Voltage Voltage Resistance Capacitance Capacitance Voltage Current (8x20s) (Note 1) (Note 1) 0V Bias 9V Bias V V I I I V V I V I R C C RWM BR T T R RWM C PP CL PP DYN J J MIN NOM MAX mA A VAVA pF pF V V V V 6.0 6.0 9.0 10 12 14 5.0 1.0 18 1.8 0.71 14 5.0 11 13 Note 1: Transmission Line Pulse (TLP) conditions: Z =50, tp=100ns 0 R3 (23-October 2015)CTLTVS12 SURFACE MOUNT SILICON UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR TLM2D3D6 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: O R3 (23-October 2015) www.centralsemi.com