CTLTVS6V2 TR Central Semiconductor

CTLTVS6V2 www.centralsemi.com SURFACE MOUNT SILICON UNI-DIRECTIONAL DESCRIPTION: TRANSIENT VOLTAGE SUPPRESSOR The CENTRAL SEMICONDUCTOR CTLTVS6V2 is a low leakage, fast response silicon TVS packaged in an ultra small, ultra low profile TLM2D3D6 surface mount case. This device is designed to protect sensitive equipment against ESD damage. MARKING CODE: S TLM2D3D6 CASE APPLICATIONS: FEATURES: User interface protection Ultra small, ultra low profile 0.3mm x 0.6mm x 0.3mm Voltage rail protection leadless surface mount package Data line protection High peak pulse current capability Voltage clamping Low leakage current MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Peak Power Dissipation (8x20s) P 35 W PK Electrical Fast Transient (IEC 61000-4-4) (5x50ns) EFT 40 A ESD Voltage (IEC 61000-4-2, Air) V 15 kV ESD ESD Voltage (IEC 61000-4-2, Contact) V 8.0 kV ESD Operating and Storage Junction Temperature T , T -55 to +150 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) V =1.0V MAX I =10mA A F F Maximum Maximum Maximum Typical Typical Typical Reverse Breakdown Test Reverse Clamping TLP Clamping Dynamic Junction Stand-off Voltage Current Leakage Voltage Voltage Resistance Capacitance Voltage Current (8x20s) (Note 1) (Note 1) 0V Bias V V I I I V V I V I R C RWM BR T T R RWM C PP CL PP DYN J MIN NOM MAX mA A VAVA pF V V V V 7.0 1.5 4.0 5.8 6.2 6.6 5.0 1.0 10.7 3.0 0.54 25 10 7.0 Note 1: Transmission Line Pulse (TLP) conditions: Z =50, tp=100ns 0 R3 (26-October 2015)CTLTVS6V2 SURFACE MOUNT SILICON UNI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR TLM2D3D6 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S R3 (26-October 2015) www.centralsemi.com