JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SOT-23 2SA812 TRANSISTOR (PNP) Unit : mm 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z Complementary to 2SC1623 z High DC Current Gain: h =200 TYP.(V =-6V,I =-1mA) FE CE C z High Voltage: V =-50V ceo MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V V Collector-Base Voltage -60 CBO V V Collector-Emitter Voltage -50 CEO V Emitter-Base Voltage -5 V EBO Collector Current -100 mA I C Collector Power Dissipation 200 mW P C Thermal Resistance From Junction To Ambient R 625 /W JA Junction Temperature 150 T j Storage Temperature T -55+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V -60 V (BR)CBO I =-100A, I =0 C E Collector-emitter breakdown voltage V I = -1mA, I=0 -50 V (BR)CEO C B Emitter-base breakdown voltage V -5 V (BR)EBO I = -100A, I =0 E C Collector cut-off current I V =- 60 V, I=0 -0.1 CBO CB E A Emitter cut-off current I V = -5V, I=0 -0.1 EBO EB C A DC current gain h V =- 6V, I = -1mA 90 600 FE CE C Collector-emitter saturation voltage V (sat) I =-100mA, I = -10mA -0.3 V CE C B Base-emitter voltage V I =-1mA, V=-6V -0.58 -0.68 V BE C CE Transition frequency f V =-6V, I = -10mA 180 MHz T CE C Collector output capacitance C V =-10V,I=0,f=1MHz 4.5 pF ob CB E CLASSIFICATION OF hFE M4 M5 M6 M7 Rank Range 90-180 135-270 200-400 300-600 Marking M4 M5 M6 M7 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Oct,2014Typical Characteristics I h Static Characteristic C FE -4 600 COMMON EMITTER T =25 a 500 o -9uA -3 Ta=100 C -8.1uA 400 -7.2uA -6.3uA -2 300 -5.4uA o Ta=25 C -4.5uA 200 -3.6uA -1 -2.7uA 100 -1.8uA COMMON EMITTER V =-6V I =-0.9uA CE B -0 0 -0 -2 -4 -6 -8 -1 -10 -100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) C CE V I V I CEsat C BEsat C -1000 -200 -100 -800 Ta=100 Ta=25 -600 Ta=25 Ta=100 =10 =10 -10 -400 -1 -10 -100 -1 -10 -100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C -100 1000 COMMON EMITTER V =-6V CE T =100 a T =25 -10 a 100 COMMON EMITTER V =-6V CE o T =25 C a -1 10 -400 -600 -800 -1000 -1 -10 -100 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (mV) C BE C / C V / V Pc Ta ob ib CB EB 250 20 f=1MHz I =0/ I =0 E C o Ta=25 C 200 10 C ib 150 C ob 100 50 1 0 -0.1 -1 -10 -20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERAT URE Ta () www.cj-elec.comwww.cj-elec.com 2 C,Oct,2014A,Jun,2014 COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) CAPACITANCE C (pF) CEsat COLLCETOR CURRENT I (mA) C COLLECTOR CURRENT I (mA) C BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) DC CURRENT GAIN h Pc (mW) TRANSITION FREQUENCY f (MHz) BEsat FE T