JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE z NPN silicon epitaxial planar transistor for switching and 1. EMITTER Amplifier applications 2. BASE z As complementary type, the PNP transistor 2N3906 is Recommended 3. COLLECTOR z This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current -Continuous 0.2 A C P Collector Power Dissipation 0.625 W C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =10A, I=0 60 V (BR)CBO C E Collector-emitter breakdown voltage V I = 1mA , I=0 40 V (BR)CEO C B V I = 10A, I=0 6 V Emitter-base breakdown voltage (BR)EBO E C I V =60V, I=0 0.1 A Collector cut-off current CBO CB E Collector cut-off current I V = 40V, I=0 0.1 A CEO CE B Emitter cut-off current I V = 5V, I=0 0.1 A EBO EB C h V =1V, I=10mA 100 400 FE1 CE C DC current gain h V =1V, I=50mA 60 FE2 CE C h V =1V, I=100mA 30 FE3 CE C Collector-emitter saturation voltage V I =50mA, I=5mA 0.3 V CE(sat) C B Base-emitter saturation voltage V I =50mA, I=5mA 0.95V BE(sat) C B Transition frequency f V =20V,I=10mA,f=100MHz 300 MH T CE C Z Delay Time t V =3V,V =0.5V, 35 ns d CC BE I =10mA,I =1mA Rise Time t C B1 35 ns r Storage Time t V =3V, I =10mA 200 ns s CC C I =I =1mA Fall Time t B1 B2 50 ns f CLASSIFICATION OF h FE1 Rank O Y G 100-200 200-300 300-400 Range B.Mar,2012Typical Characteristics 2N3904 h I Static Characteristic FE C 100 1000 COMMON EMITTER COMMON EMITTER T =25 V =1V a CE 500uA 450uA 80 T =100 a 400uA 300 350uA 60 T =25 300uA a 250uA 100 200uA 40 150uA 30 20 100uA I =50uA B 0 10 3 200 024 68 10 110 30100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 1000 3000 300 1000 T =25 a T =100 a 100 T =100 a T =25 a 30 =10 =10 10 100 113 0 30100 200 113 0 30100 200 COLLECTOR CURRENT I (mA) c COLLECTOR CURRENT I (mA) C V C / C I V / V BE ob ib C CB EB 10 200 V =5V CE f=1MHz 100 C ib I =0/I =0 E C Ta=25 30 Ta=100 C ob 10 1 3 Ta=25 1 0.3 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.3 1 3 10 20 BASE-EMMITER VOLTAGE V (V) REVERSE BIAS VOLTAGE V (V) BE f I Pc Ta T C 1000 700 COMMON EMITTER 600 V =20V CE T =25 a 300 500 400 100 300 200 100 10 0 2 5 10 30 70 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a B.Mar,2012 TRANSITION FREQUENCY f (MHz) COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) T COLLCETOR CURRENT I (mA) C C VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION CAPACITANCE C (pF) DC CURRENT GAIN h FE VOLTAGE V (mV) Pc (mW) BEsat