X-On Electronics has gained recognition as a prominent supplier of 2N5551 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5551 Bipolar Transistors - BJT are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2N5551 Changjing Electronics Technology

2N5551 electronic component of Changjing Electronics Technology
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See Product Specifications
Part No.2N5551
Manufacturer: Changjing Electronics Technology
Category: Bipolar Transistors - BJT
Description: transistors (npn/pnp) npn 600ma 160v to-92 (to-92-3) rohs
Datasheet: 2N5551 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0312 ea
Line Total: USD 0.62 
Availability - 1938
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
380
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 20
Multiples : 20
20 : USD 0.0312
200 : USD 0.0248
1000 : USD 0.0215
2000 : USD 0.0195
10000 : USD 0.0176
20000 : USD 0.0166

1938
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 20
Multiples : 20
20 : USD 0.0312
200 : USD 0.0248
1000 : USD 0.0205
2000 : USD 0.0182
10000 : USD 0.0165
20000 : USD 0.0154

3950
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 20
Multiples : 20
20 : USD 0.0312
200 : USD 0.0253
1000 : USD 0.0219
2000 : USD 0.0197
10000 : USD 0.0181
20000 : USD 0.017

   
Manufacturer
Product Category
Packaging
Brand
Rohs
Package
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
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We are delighted to provide the 2N5551 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5551 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5550 2N5551 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N5550 2N5551 UNITS Collector-Base Voltage V 160 180 V CBO Collector-Emitter Voltage V 140 160 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.0 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 125 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=100V - 100 - - nA CBO CB I V=120V - - - 50 nA CBO CB I V =100V, T=100C - 100 - - A CBO CB A I V =120V, T=100C - - - 50 A CBO CB A I V=4.0V - 50 - 50 nA EBO EB BV I=100A 160 - 180 - V CBO C BV I=1.0mA 140 - 160 - V CEO C BV I=10A 6.0 - 6.0 - V EBO E V I =10mA, I=1.0mA - 0.15 - 0.15 V CE(SAT) C B V I =50mA, I=5.0mA - 0.25 - 0.20 V CE(SAT) C B V I =10mA, I=1.0mA - 1.0 - 1.0 V BE(SAT) C B V I =50mA, I=5.0mA - 1.2 - 1.0 V BE(SAT) C B h V =5.0V, I=1.0mA 60 - 80 - FE CE C h V =5.0V, I=10mA 60 250 80 250 FE CE C h V =5.0V, I=50mA 20 - 30 - FE CE C h V =10V, I =1.0mA, f=1.0kHz 50 200 50 200 fe CE C f V =10V, I =10mA, f=100MHz 100 300 100 300 MHz T CE C C V =10V, I =0, f=1.0MHz - 6.0 - 6.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 30 - 20 pF ib BE C NF V =5.0V, I=250A, CE C R =1.0, f=10Hz to 15.7kHz - 10 - 8.0 dB S R1 (2-December 2014)2N5550 2N5551 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-December 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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