2N5550 2N5551 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL 2N5550 2N5551 UNITS Collector-Base Voltage V 160 180 V CBO Collector-Emitter Voltage V 140 160 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current I 600 mA C Power Dissipation P 625 mW D Power Dissipation (T=25C) P 1.0 W C D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 125 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=100V - 100 - - nA CBO CB I V=120V - - - 50 nA CBO CB I V =100V, T=100C - 100 - - A CBO CB A I V =120V, T=100C - - - 50 A CBO CB A I V=4.0V - 50 - 50 nA EBO EB BV I=100A 160 - 180 - V CBO C BV I=1.0mA 140 - 160 - V CEO C BV I=10A 6.0 - 6.0 - V EBO E V I =10mA, I=1.0mA - 0.15 - 0.15 V CE(SAT) C B V I =50mA, I=5.0mA - 0.25 - 0.20 V CE(SAT) C B V I =10mA, I=1.0mA - 1.0 - 1.0 V BE(SAT) C B V I =50mA, I=5.0mA - 1.2 - 1.0 V BE(SAT) C B h V =5.0V, I=1.0mA 60 - 80 - FE CE C h V =5.0V, I=10mA 60 250 80 250 FE CE C h V =5.0V, I=50mA 20 - 30 - FE CE C h V =10V, I =1.0mA, f=1.0kHz 50 200 50 200 fe CE C f V =10V, I =10mA, f=100MHz 100 300 100 300 MHz T CE C C V =10V, I =0, f=1.0MHz - 6.0 - 6.0 pF ob CB E C V =0.5V, I =0, f=1.0MHz - 30 - 20 pF ib BE C NF V =5.0V, I=250A, CE C R =1.0, f=10Hz to 15.7kHz - 10 - 8.0 dB S R1 (2-December 2014)2N5550 2N5551 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-December 2014) www.centralsemi.com