JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel) I V R MAX D (BR)DSS DS(on) SOT-563 6 2.5 10V 5 6 0 V 4 115mA 3 5V 1 2 3 FEATURE APPLICATION z Dual N-channel MOSFET Load Switch for Portable Devices z DC/DC Converter Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Drain-Source voltage 60 V DS V Gate-Source voltage 2 0 V GS ID Drain Current 115 mA P Power Dissipation 150 mW D T Junction Temperature 150 J T Storage Temperature -55-150 stg Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Pameterar Symbol Test conditions Min Typ Max Unit Drain-Source Breakdown Voltage V V =0 V, I =250 A 60 (BR)DSS GS D V 1.62.5 Gate-Threshold Voltage V V =V , I =250 A 1 th(GS) DS GS D Gate-body Leakage l V =0 V, V =20 V 80 nA GSS DS GS nA Zero Gate Voltage Drain Current I V =60 V, V =0 V 80 DSS DS GS mA On-state Drain Current I V =10 V, V =7 V 500 D(ON) GS DS 2.5 V =10 V, I=500mA 1 0.9 .5 GS D Drain-Source On-Resistance r DS(0n) V =5 V, I=50mA 1 1.1 3.5 GS D mS Forward Trans conductance g V =10 V, I=200mA 80 500 fs DS D V V =10V, I=500mA 0.5 3.75 GS D Drain-source on-voltage V DS(on) V V =5V, I=50mA 0.05 0.375 GS D V Diode Forward Voltage V I =115mA, V =0 V 0.55 1.2 SD S GS Input Capacitance C 50 iss pF Output Capacitance C V =25V, V =0V, f=1MHz 25 OSS DS GS Reverse Transfer Capacitance C 5 rSS SWITCHING TIME t V =25 V, R =50 20 d(on) DD L Turn-on Time ns I =500mA,V =10 V D GEN t 40 d(off) Turn-off Time R =25 G www.jscj-elec.com Rev. - 1.0 2