JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1162 TRANSISTOR (PNP) 3 FEATURES 1 . Low noise 2 . Complementary to 2SC2712 1. BASE . Small Package 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG =25 unless otherwise noted) MAXIMUM RATINGS (Ta Symbol ParaValue Unit meter V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Current -Continuous -150 mA C P Collector Power Dissipation 150 mW D T Junction Temperature 150 J T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Symbol st condiTe tions Min Typ Max Unit Parameter I =-100A,I=0 -50 V Collector-base breakdown voltage V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA,I=0 -50 V (BR)CEO C B Emitter-base breakdown voltage V I =-100A,I=0 V -5 (BR)EBO E C Collector cut-off current I V =-50V,I=0 -0.1 A CBO CB E Emitter cut-off current I V =-5V,I=0 -0.1 A EBO EB C DC current gain h V =-6V,I=-2mA 70 400 FE CE C Collector-emitter saturation voltage V I =-100mA,I=-10mA -0.3 V CE(sat) C B Transition frequency f V =-10V,I=-1mA 80 MHz T CE C Collector output capacitance C V =-10V,I=0,f=1MHz 7 pF ob CB E V =-6V,I =0.1mA, CE c Noise figure NF 10 dB f=1KHz,Rg=10K CLASSIFIC ATION OF h FE Rank O Y GR(G) Range 70-140 120-240 200-400 B,Dec,2011Typical Characterisitics 2SA1162 h I Static Characteristic FE C -4 300 COMMON EMITTER COMMON V =-6V EMITTER CE Ta=25 -20uA Ta=100 -3 -18uA 200 -16uA Ta=25 -14uA -2 -12uA -10uA -8uA 100 -6uA -1 -4uA I =-2uA B -0 0 -0.1 -1 -3 -10 -100 -0 -2 -4 -6 -8 -10 -0.3 -30 -150 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I BEsat C CEsat C -500 -1.2 -300 -0.8 Ta=25 -100 Ta=100 Ta=100 Ta=25 -0.4 -30 =10 =10 -10 -0.0 -0.3 -1 -3 -10 -30 -100 -150 -0.2 -0.5 -1 -3 -10 -30 -100-150 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB -150 20 -100 COMMON EMITTER f=1MHz V =-6V I =0/ I =0 CE E C Ta=25 -30 Cib 10 Ta=100 -10 Cob -3 3 Ta=25 -1 -0.3 -0.1 1 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -0.3 -1 -3 -10 -20 REVERSE VOLTAGE V (V) BASE-EMMITER VOLTAGE V (V) BE P T f I C a T C 200 300 V =-10V CE Ta=25 150 200 100 50 0 100 -1 -3 -10 -30 -100 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a B,Dec,2011 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) C COLLECTOR CURRENT I (mA) T C VOLTAGE V (mV) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h FE CAPACITANCE C (pF) VOLTAGE V (V) P (mW) BEsat C