JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR z Complementary to 2SC2873 z Small Flat Package 3. EMITTER z Power Amplifier and Switching Applications z Low Saturation Voltage z High Speed Switching Time MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -2 A C P Collector Power Dissipation 500 mW C R Thermal Resistance From Junction To Ambient 250 /W JA T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = -0.1mA,I=0 -50 V (BR)CBO C E Collector-emitter breakdown voltage V I =-10mA,I=0 -50 V (BR)CEO C B V I =-0.1mA,I=0 -5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current I V =-50V,I=0 -100 nA CBO CB E Emitter cut-off current I V =-5V,I=0 -100 nA EBO EB C V =-2V, I=-500mA 70 240 CE C DC current gain h FE V =-2V, I=-2A 20 CE C V I =-1A,I =-50mA -0.5 V Collector-emitter saturation voltage CE(sat) C B Base-emitter saturation voltage V I =-1A,I =-50mA -1.2 V BE(sat) C B Collector output capacitance C V =-10V,I =0, f=1MHz 40 pF ob CB E Transition frequency f VCE=-2V,IC= -0.5A 100 MHz T CLASSIFICATION OF h FE RANK O Y RANGE 70140 120240 MARKING NO NY A,Nov,2010 Typical Characterisitics 2SA1213 Static Characteristic h I FE C -1000 1000 COMMON COMMON EMITTER -6mA EMITTER V =-2V CE T =25 -5.4mA a -800 -4.8mA 300 T =100 -4.2mA a -3.6mA -600 T =25 -3mA a 100 -2.4mA -400 -1.8mA 30 -1.2mA -200 I =-600uA B -0 10 -3 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -1 -10 -30 -100 -500 -1000 -2000 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I BEsat C CEsat C -1000 -1000 T =25 a -300 T =100 a -100 T =100 a -30 T =25 a =20 =20 -10 -200 -1 -3 -10 -30 -100 -300 -1000 -1 -3 -10 -30 -100 -300 -1000 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C /C V /V C BE ob ib CB EB -1000 1000 f=1MHz I =0/I =0 E C -300 T =25 a 300 -100 C ib T =100 a 100 -30 T =25 a C -10 ob 30 -3 V =-2V CE -1 10 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.1 -1 -10 -20 -0.3 -3 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (V) BE P T C a 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) A,Nov,2010 a BASE-EMMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) P (mW) COLLECTOR CURRENT I (mA) BEsat C C COLLECTOR CURRENT I (mA) C COLLECTOR-EMMITTER SATURATION VOLTAGE V (mV) DC CURRENT GAIN h CAPACITANCE C (pF) CEsat FE