JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC (T 2SA1585 TRANSISTOR (PNP) SOT-23 FEATURES z Low VCE(sat) z Excellent DC current gain characteristics. Power dissipation 1. BASE MAXIMUM RATINGS* T =25 unless otherwise noted A 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units V Collector-Base Voltage -20 V CBO V Collector-Emitter Voltage -20 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -Continuous -2 A C P Collector Power Dissipation 350 mW C T emperature 150 j Junction T T Storage Temperature Range -55-150 stg ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -20 V (BR)CBO I = -50A , I =0 C E Collector-emitter breakdown voltage V I = -1 mA , I=0 -20 V (BR)CEO C B Emitter-base breakdown voltage V I =- 50A, I =0 -6 V (BR)EBO E C Collector cut-off current I V =-20V , I=0 -0.1 A CBO CB E Emitter cut-off current I V = -5V , I=0 -0.1 A EBO EB C DC current gain h V =-2 V, I= -0.1A 120 390 FE CE C Collector-emitter saturation voltage V I = -2A, I=-0.1A -0.5 V CEsat C B V =-2V, I =-0.5A CE C Transition frequency f 240 MHz T f=100MHz CLASSIFICATION OF h FE Rank Q R Range 120-270 180-390 Marking R www.cj-elec.comwww.cj-elec.com C,Sep1 A,Jun,2014,2016 ( (4Typical Characteristics h I Static Characteristic FE C -0.35 600 COMMON EMITTER COMMON -1mA V = -2V CE EMITTER -0.30 -0.9mA 500 T =25 a -0.8mA -0.25 -0.7mA T =100 a 400 -0.6mA -0.20 -0.5mA 300 -0.15 T =25 -0.4mA a 200 -0.3mA -0.10 -0.2mA 100 -0.05 I =-0.1mA B -0.00 0 -2 -0 -1 -2 -3 -4 -5 -0.01 -0.1 -1 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (A) CE C C / C V / V V I CB EB CEsat C ob ib -1 200 =20 f=1MHz I =0/I =0 E C T =25 a 100 C ib T =100 a -0.1 C ob T =25 a -0.01 10 -0.01 -0.1 -1 -2 -0.1 -1 -10 COLLECTOR CURRENT I (A) REVERSE BIAS VOLTAGE V (V) C P T f I C a T C 250 400 200 300 150 200 100 100 50 V =-2V CE T =25 a 0 0 -100 0 25 50 75 100 125 150 -10 -30 COLLECTOR CURRENT I (mA) C AMBIENT TEMPERATURE T ( ) a www.cj-elec.comwww.cj-elec.com 2 C,Sep,2016 COLLECTOR-EMITTER SATURATION TRANSITION FREQUENCY f (MHz) COLLECTOR CURRENT I (A) T C VOLTAGE V (V) CEsat COLLECTOR POWER DISSIPATION CAPACITANCE C (pF) DC CURRENT GAIN h FE P (mW) C