JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors JC ( T TO-92L 2SA966 TRANSISTOR (PNP) 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -1.5 A C Pc Collector Power Dissipation 0.9 W T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR) I = -1mA , I=0 -30 V CBO C E Collector-emitter breakdown voltage V(BR) I = -10mA ,I=0 -30 V CEO C B Emitter-base breakdown voltage V(BR) I = -1mA, I=0 -5 V EBO E C Collector cut-off current I V = -30V, I=0 -0.1 A CBO CB E Emitter cut-off current I V = -5V, I=0 -0.1 A EBO EB C DC current gain h V =-2V, I = -500mA 100 320 FE CE C Collector-emitter saturation voltage V I = -1.5 A, I = -0.03A -2 V CE(sat) C B Base-emitter voltage V I = -500mA,V=-2V -1 V BE C CE Transition frequency f V = -2V, I =-500mA 120 MHz T CE C Collector output capacitance C 30 pF ob V =-10V, I =0, f=1MHz CB E CLASSIFICATION OF h FE Rank O Y Range 100-200 160-320 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014 C,Mar,2016Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 3.750 4.050 0.148 0.159 A1 1.280 1.580 0.050 0.062 b 0.380 0.550 0.015 0.022 b1 0.620 0.780 0.024 0.031 c 0.350 0.450 0.014 0.018 D 4.750 5.050 0.187 0.199 D1 4.000 0.157 E 7.850 8.150 0.309 0.321 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 13.800 14.200 0.543 0.559 1.600 0.063 h 0.000 0.300 0.000 0.012 www.cj-elec.com C,Mar,2016 2