JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE z High h FE 2. COLLECTOR z Low V CE(sat) 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -7 V EBO I Collector Current -Continuous -3 A C P Collector Power Dissipation 1 W D T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A, I =0 -60 V (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA, I=0 -60 V (BR)CEO C B Emitter-base breakdown voltage V I =-100A, I =0 -7 V (BR)EBO E C Collector cut-off current I V =-60V, I=0 -10 A CBO CB E Emitter cut-off current I V =-7V, I=0 -10 A EBO EB C h V =-2V, I=-200mA 60 FE(1) CE C DC current gain h V =-2V, I=-600mA 100 400 FE(2) CE C h V =-2V, I=-2A 50 FE(3) CE C V I =-1.5A, I=-150mA -0.3 V Collector-emitter saturation voltage CE(sat) C B Base-emitter saturation voltage V I =-1.5A, I=-150mA -1.2 V BE(sat) C B Transition frequency f V =-5V, I=-1.5A 50 MHz T CE C Collector output capacitance C V =-10V, I=0, f=1MHz 40 pF ob CB E Turn on Time t 0.5 on V =-10V, I =-1A, I =-I =-0.1A, CC C B1 B2 Switching Time Storage Time t 2.0 s stg R =10 L Fall Time t 0.5 f CLASSIFICATION OF h FE(2) Rank M L K Range 100-200 160-320 200-400 www.cj-elec.com 1 D,Nov,2014TO-251-3L Package Outline Dimensions Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 1.050 1.350 0.042 0.054 B 1.350 1.650 0.053 0.065 b 0.500 0.700 0.020 0.028 b1 0.700 0.900 0.028 0.035 c 0.430 0.580 0.017 0.023 c1 0.430 0.580 0.017 0.023 D 6.350 6.650 0.250 0.262 D1 5.200 5.400 0.205 0.213 E 5.400 5.700 0.213 0.224 e 2.300 TYP. 0.091 TYP. e1 4.500 4.700 0.177 0.185 L 7.500 7.900 0.295 0.311 www.cj-elec.com 2 D,Nov,2014