JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors C J ( T SOT-23 2SB709A TRANSISTOR (PNP) FEATURES 1. BASE z For general amplification 2. EMITTER z Complementary to 2SD601A 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage V -45 V CBO V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -7 V EBO Collector Current -Continuous I -100 mA C P Collector Power Dissipation 200 mW C Junction Temperature T 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V -45 V (BR)CBO I = -10 A, I =0 C E Collector-emitter breakdown voltage V I = -2mA, I=0 -45 V (BR)CEO C B Emitter-base breakdown voltage V -7 V (BR)EBO I = -10 A, I =0 E C Collector cut-off current I V = -20 V, I=0 -0.1 CBO CB E A Collector cut-off current I V = -10V, I=0 -100 CEO CE B A DC current gain h V = -10V,I = -2mA 160 460 FE CE C Collector-emitter saturation voltage V (sat) I =-100 mA, I = -10mA -0.5 V CE C B V = -10V, I = -1mA CE C 60 MHz Transition frequency f T f=200MHz V = -10V, I = 0 CB E 2.7 pF Collector output capacitance C ob f=1MHz CLASSIFICATION OF h FE Rank R S Q 210-340 290-460 Range 160-260 Marking BR1 BS1 BQ1 www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014C,Oct,2014Typical Characteristics h I Static Characteristic FE C -8 600 V = -10V CE COMMON -7 -3.0uA EMITTER 500 T =25 a -2.7uA -6 -2.4uA 400 o T =100 C -5 a -21uA -18uA -4 300 -15uA -3 -12uA 200 o T =25 C a -9uA -2 -6uA 100 -1 I =-3uA B -0 0 -0 -5 -10 -15 -0.1 -1 -10 -100 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I C / C V / V CEsat C ob ib CB EB -200 100 =10 f=1MHz I =0 / I =0 E C o T =25 C a -150 -100 10 T =100 a C ib -50 C ob T =25 a =10 -0 1 -1 -10 -100 -0.1 -1 -10 -20 REVERSE VOLTAGE V (V) COLLECTOR CURRENT I (mA) C P T f I c a T C 250 250 V =-10V CE o T =25 C a 200 200 150 150 100 100 50 50 0 0 -1 -10 -100 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a COLLECTOR CURRENT I (mA) C www.cj-elec.comwww.cj-elec.com 2 A,Jun,2014C,Oct,2014 COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) C T CEsat COLLECTOR POWER DISSIPATION P (mW) DC CURRENT GAIN h CAPACITANCE C (pF) c FE