JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) TO-92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.BASE Symbol Parameter Value Unit V 60 V CBO Collector-Base Voltage V 50 V CEO Collector-Emitter Voltage V 5 V EBO Emitter-Base Voltage I Collector Current -Continuous 150 mA C P Collector Power Dissipation 400 mW C Thermal Resistance from Junction RJA 312 /W to Ambient T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = 100uA, I=0 60 V (BR)CBO C E Collector-emitter breakdown voltage V I = 0. 1mA, I=0 50 V (BR)CEO C B Emitter-base breakdown voltage V I = 100uA, I=0 5 V (BR)EBO E C Collector cut-off current I V = 60V,I0 0.1 uA CBO CB E Collector cut-off current I V = 50V, I0 0.1 uA CEO CE B Emitter cut-off current I V =5V,I0 0.1 uA EBO EB C DC current gain h V = 6 V, I = 2mA 70 700 FE CE C Collector-emitter saturation voltage V I =100mA, I=10mA 0.25 V CE(sat) C B Base-emitter saturation voltage V I =100mA, I=10mA 1 V BE(sat) C B V =10 V, I = 1mA CE C Transition frequency f 80 MHz T f=30MHz V =10V,I =0 CB E Collector Output Capacitance Cob 3.5 pF f=1MHz V =6V,I =0.1mA CE C Noise Figure NF 10 dB f =1KHz,R =10K G CLASSIFICATION OF h FE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 A,Nov,2012 = = =Typical Characteristics 2SC1815 h I Static Characteristic FE C 0.012 1000 COMMON EMITTER COMMON EMITTER T =25 V =6V a 60uA CE 0.010 54uA T =100 a 48uA 0.008 42uA T =25 a 36uA 0.006 100 30uA 24uA 0.004 18uA 12uA 0.002 I =6uA B 0.000 10 150 024 68 10 12 0.2 110 100 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V V I I BEsat CEsat C C 1 2 =10 =10 1 0.3 T =25 a T =100 a 0.1 T =100 a T =25 0.03 a 0.01 0.1 0.1 1 10 100 150 0.1 1 10 100 150 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 150 20 100 f=1MHz I =0/ I =0 E C T =25 a 10 C ib 10 C ob 1 COMMON EMITTER V =6V CE 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 110 0.2 20 BASE-EMITTER VOLTAGE V (V) BE REVERSE VOLTAGE V (V) f P T I T C a C 1000 500 COMMON EMITTER V =10V CE T =25 a 400 300 100 200 100 0 10 0.4 1 3 10 30 100 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) COLLECTOR CURRENT I (mA) a C A,Nov,2012 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (A) TRANSITION FREQUENCY f (MHz) C T COLLECTOR CURRENT I (mA) VOLTAGE V (V) C CEsat COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION DC CURRENT GAIN h CAPACITANCE C (pF) FE P (mW) C VOLTAGE V (V) BEsat