JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR z Wide safe Operating Area. 3. EMITTER z Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 1.5 A C P Collector Power Dissipation 1.5 W C Junction Temperature 150 T j T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A, I=0 150 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I=0 150 V (BR)CEO C B V I =100A, I=0 5 V Emitter-base breakdown voltage (BR)EBO E C Collector cut-off current I V =120V, I=0 10 A CBO CB E Emitter cut-off current I V =5V, I=0 10 A EBO EB C DC current gain h V =10V, I=0.5A 40 140 FE CE C Collector-emitter saturation voltage V I =0.5A, I=50mA 1.5 V CE(sat) C B V V =10V, I =0.5A 0.65 0.85 V Base-emitter voltage BE CE C Transition frequency f V =10V, I=0.5A 4 MHz T CE C Collector output capacitance C V =10V, I=0, f=1MHz 35 pF ob CB E www.cj-elec.com 1 A,Nov,2014TO-220-3L Package Outline Dimensions Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e 2.540 TYP 0.100 TYP e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 3.735 3.935 0.147 0.155 www.cj-elec.com 2 B,Nov,2014