JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2391 TRANSISTOR (NPN) SOT-89-3L FEATURES Low V CE(sat) 1.BASE 1 2 3 2.COLLECTOR Marking: DT 3.EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current -Continuous 2 A C P Collector Power Dissipation 0.5 W C T Junction Temperature 150 J T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =50A,I=0 60 V (BR)CBO C E V I =1mA,I=0 60 V Collector-emitter breakdown voltage (BR)CEO C B V I =50A,I=0 6 V Emitter-base breakdown voltage (BR)EBO E C I V =50V,I=0 0.1 A Collector cut-off current CBO CB E Emitter cut-off current I V =5V,I=0 0.1 A EBO EB C h V =2V,I=0.5A 120 270 FE(1) CE C DC current gain h V =2V,I=1.5A 45 FE(2) CE C Collector-emitter saturation voltage V I =1A,I=50mA 0.35 V CE(sat) C B Transition frequency f V =2V,I =0.5A, f=100MHz 210 MHz T CE C Output capacitance Cob V =10V,I=0, f=1MHz 21 pF CB E www.cj-elec.com 1 D,Sep,2017Typical Characteristics h I Static Characteristic FE C 1.5 400 V = 2V CE COMMON EMITTER 5mA T =25 o a T =100 C a 4.5mA 300 4mA 1.0 3.5mA 200 3.mA 2.5mA o T =25 C a 0.5 2mA 100 1.5mA 1mA I =0.5mA B 0.0 0 2000 012 3456 1 10 100 1000 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C 1000 400 =20 800 300 T =25 a 600 200 T =100 T =100 a a 400 100 T =25 a =20 200 0 0.1 1 10 100 1000 2000 0.1 1 10 100 1000 2000 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 1000 2000 f=1MHz 1000 V =2V CE I =0 / I =0 E C 50 o T =25 C a 100 C o ib T =100 C a 100 10 C ob T =25 a 1 0.1 10 200 400 600 800 1000 1200 0.1 1 10 20 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (mV) BE P T c a 600 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 D,Sep,2017 COLLECTOR CURRENT I (mA) COLLECTOR POWER DISSIPATION C BASE-EMITTER SATURATION COLLECTOR CURRENT I (A) C P (mW) c VOLTAGE V (mV) BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) DC CURRENT GAIN h CEsat FE CAPACITANCE C (pF)