JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-723 Plastic-Encapsulate MOSFETS 2SK3541 N-Channel MOSFET SOT-723 I V R MAX D (BR)DSS DS(on) 8 4 V 3 0 V 100mA 13 2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION z Interfacing , Switching z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Drive circuits can be simple z Parallel use is easy Equivalent Circuit MARKING Maximum ratings (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-source voltage V 30 DS V Gate-source voltage V 20 GS Continuous drain current I 100 mA D Power dissipation P 0.15 W D Thermal resistance from junction to ambient R 833 JA /W Junction temperature T 150 J Storage temperature T -55 ~+150 stg * Pw10s ,Duty cycle1% Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =10A 30 V Gate-source leakage current I VDS =0V, VGS =20V 2 A GSS Zero gate voltage drain current I VDS =30V, VGS =0V 1.0 A DSS Gate threshold voltage VGS(th) VDS =3V, ID =100A 0.8 1.5 V VGS =4V, ID =10mA 5 8 Static drain-source on-state resistance RDS(on) VGS =2.5V, ID =1mA 7 13 20 Forward transconductance g VDS =3V, ID =10mA mS FS Input capacitance C 13 iss Output capacitance C VDS =5V,VGS =0V,f =1MHz 9 pF oss Reverse transfer capacitance C 4 rss Turn-on delay time td(on) 15 Rise time tr V =5V,V =5V, ID =10mA 35 GS DD ns R =500,R =10 Turn-off delay time td(off) L G 80 Fall time tf 80 www.jscj-elec.com Rev. - 1.0 2