JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8550S TRANSISTOR (PNP) TO-92 FEATURE Excellent h linearity FE 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 8 550S 8550S ( ) Z Z=Rank of hFE %%% & 1 ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 8550S TO-92 Bulk 1000pcs/Bag 8550S-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta=25 unless otherwise noted) alue VUnit Symbol Parameter V Collector-Base Voltage -40 V CBO -25 V V Collector-Emitter Voltage CEO V Emitter-Base Voltage -5 V EBO Collector Current -Continuous -500 mA I C P Collector Dissipation 625 mW C Junction Temperature 150 T J -55-150 T Junction and Storage Temperature stg www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014E,Dec,2017 T =25 unless otherwise specified a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = -100uA, I =0 -40 V (BR)CBO C E Collector-emitter breakdown voltage V I = -1mA, I=0 -25 V (BR)CEO C B Emitter-base breakdown voltage V I = -100uA, I=0 -5 V (BR)EBO E C Collector cut-off current I V = -40V, I=0 -0.1 uA CBO CB E Collector cut-off current I V = -20V,I=0 -0.1 uA CEO CE B Emitter cut-off current I V = - 3V, I=0 -0.1 uA EBO EB C h V = -1V, I = -50mA 85 400 FE(1) CE C DC current gain h V = -1V, IC= -500mA 50 FE(2) CE Collector-emitter saturation voltage V I =-500mA, I=-50mA -0.6 V CE(sat) C B Base-emitter saturation voltage V(sat) I =-500mA, I=-50mA -1.2 V BE C B V =- 6V, I =-20mA CE C Transition frequency f 150 MHz T f =30MHz CLASSIFICATION OF hFE (1) Rank B C D D3 Range 85-160 120-200 160-300 300-400 www.cj-elec.com 0Aug0 &