JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A42 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 3. EMITTER MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage 310 V CBO V Collector-Emitter Voltage 305 V CEO V Emitter-Base Voltage 5 V EBO Collector Current -Continuous 200 mA I C I Collector Current -Pulsed 500 mA CM P Collector Power Dissipation 500 mW C R Thermal Resistance from Junction to Ambient 250 /W JA T Junction Temperature 150 J T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =100A,I=0 310 V Collector-base breakdown voltage (BR)CBO C E Collector-emitter breakdown voltage V I =1mA,I=0 305 V (BR)CEO C B Emitter-base breakdown voltage V I =100A,I=0 5 V (BR)EBO E C I V =200V,I=0 0.25 A CBO CB E Collector cut-off current V =100V,V=5V 5 A CE X I CEX V =300V,V=5V 10A CE X Emitter cut-off current I V =5V,I=0 0.1 A EBO EB C h V =10V, I=1mA 60 FE(1) CE C DC current gain h V =10V, I=10mA 100 300 FE(2) CE C h V =10V, I=30mA 75 FE(3) CE C V I =20mA,I =2mA 0.2 V Collector-emitter saturation voltage CE(sat) C B Base-emitter saturation voltage V I =20mA,I=2mA 0.9 V BE(sat) C B Transition frequency f VCE=20V,IC=10mA, f=30MHz 50 MHz T www.cj-elec.com 1 E,Nov,2015Typical Characteristics I V h I C CE FE C 18 1000 90uA COMMON EMITTER 16 80uA T =25 a 14 70uA T =100 a 12 60uA T =25 50uA 10 a 100 40uA 8 30uA 6 20uA 4 I =10uA B 2 COMMON EMITTER V =10V CE 0 10 200 02468 10 12 14 16 18 20 22 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V V I I CEsat BEsat C C 900 500 T =25 a 600 T =100 a 100 T =25 a T =100 a =10 =10 10 300 0.1 1 10 100 0.1 1 10 100 COLLECTOR CURREMT I (mA) COLLECTOR CURREMT I (mA) C C I V f I C BE T C 100 300 100 10 1 COMMON EMITTER V =20V COMMON EMITTER CE V =10V T =25 CE a 0.1 10 0 300 600 900 1200 0.1 1 10 100 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (mV) C BE C /C V /V P T ob ib CB EB C a 100 600 f=1MHz I =0/I =0 E C 500 T =25 C a ib 400 10 300 200 C ob 100 1 0 0.1 1 10 20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 E,Nov,2015 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) C VOLTAGE V (mV) COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) CEsat C BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION DC CURRENT GAIN h TRANSITION FREQUENCY f (MHz) VOLTAGE V (mV) FE P (mW) T C BEsat