JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A44 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR z Low Collector-Emitter Saturation Voltage z High Breakdown Voltage 3. EMITTER MARKING: A44 MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter ValueUnit V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current -Continuous 200 mA C ICM Collector Current -Pulsed 300 mA P Collector Power Dissipation 500 mW C R Thermal Resistance from Junction to Ambient 250 /W JA T Junction Temperature 150 j T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100A,I=0 400 V (BR)CBO C E * Collector-emitter breakdown voltage V I =1mA,I=0 400 V (BR)CEO C B Emitter-base breakdown voltage V I =10A,I=0 6 V (BR)EBO E C Collector cut-off current I V =400V,I=0 0.1 A CBO CB E I V =4V,I=0 0.1 A Emitter cut-off current EBO EB C h * V =10V, I=1mA 40 FE(1) CE C h * V =10V, I=10mA 50 200 FE(2) CE C DC current gain h * V =10V, I=50mA 45 FE(3) CE C h * V =10V, I=100mA 40 FE(4) CE C I =1mA,I =0.1mA 0.4 V C B Collector-emitter saturation voltage V * I =10mA,I =1mA 0.5 V CE(sat) C B I =50mA,I =5mA 0.75 V C B Base-emitter saturation voltage V * I =10mA,I=1mA 0.75 V BE(sat) C B Collector output capacitance C V =20V, I =0, f=1MHz 7 pF ob CB E C V =0.5V, I =0, f=1MHz 130 pF Emitter input capacitance ib BE C *Pulse test: pulse width 300 s, duty cycle 2.0%. www.cj-elec.com 1 E,Nov,2015Typical Characteristics h I Static Characteristic FE C 35 1000 V = 10V COMMON CE 200uA EMITTER 30 T =25 180uA a o T =100 C a 25 160uA 140uA 20 120uA 100 o T =25 C a 15 100uA 80uA 10 60uA 40uA 5 I =20uA B 0 10 0 5 10 15 20 25 1 10 100 300 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C 1000 250 =10 200 800 T =25 a 150 600 T =100 a 100 T =100 a 400 50 T =25 a =10 200 0 300 1 10 100 300 1 10 100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 300 1000 f=1MHz I =0 / I =0 E C 250 o T =25 C a C ib 200 100 o 150 T =100 C a 100 T =25 10 a C ob 50 V =10V CE 0 1 200 400 600 800 1000 0.1 1 10 20 REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V (mV) BE P T c a 0.75 0.50 0.25 0.00 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 E,Nov,2015 COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION P (W) COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) VOLTAGE V (mV) C c C BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) DC CURRENT GAIN h FE CAPACITANCE C (pF) CEsat