A94 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L A94 TRANSISTOR (PNP) FEATURES 1 High voltage 2 3 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. EMITTER Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -0.2 A C I Collector Current- Pulsed -0.3 A CM P Collector Power Dissipation 0.5 W C T Junction Temperature 150 J T storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = -100A, I=0 -400 V (BR) CBO C E Collector-emitter breakdown voltage V I = -1mA,I=0 -400 V (BR) CEO C B Emitter-base breakdown voltage V I =-100A,I=0 -5 V (BR) EBO E C Collector cut-off current I V =-400V, I=0 -0.1 A CBO CB E Collector cut-off current I V =-400V, I=0 -5 A CEO CE B Emitter cut-off current I V = -4V, I=0 -0.1 A EBO EB C h V =-10V, I=-10mA 80 300 FE(1) CE C h V =-10V, I=-1mA 70 FE(2) CE C DC current gain h V =-10V, I=-100mA 60 FE(3) CE C h V =-10V, I=-50mA 80 FE(4) CE C V I =-10mA, I=-1mA -0.2 V CE (sat) C B Collector-emitter saturation voltage V I =-50mA, I=-5mA -0.3 V CE (sat) C B Base-emitter saturation voltage V I =-10mA, I = -1mA -0.75 V BE (sat) C B V =-20V, I =-10mA CE C Transition frequency f 50 MHz T f =30MHz B,May,2012 B,May,2012 &ROOHFWRU &XUUHQW 3XOVHGTypical Characteristics A94 h I Static Characteristic FE C -14 500 COMMON COMMON EMITTER EMITTER V = -10V -100uA CE 300 -12 T =25 a -90uA T =100 a -10 -80uA T =25 -70uA a 100 -8 -60uA -50uA -6 -40uA -4 30 -30uA -20uA -2 I =-10uA B -0 10 -3 -0 -4 -8 -12 -16 -20 -1 -10 -30 -100 -200 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I CEsat C BEsat C -1000 -10 T =25 a -3 T =100 a -1 -0.3 -300 T =100 a -0.1 T =25 a -0.03 =10 =10 -100 -0.01 -1 -3 -10 -30 -100 -200 -1 -3 -10 -30 -100 -200 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C -200 100 -100 -30 30 -10 -3 COMMON EMITTER V = -20V COMMON EMITTER CE V =-10V T =25 CE a -1 10 -200 -400 -600 -800 -1000 -3 -10 -100 -30 COLLECTOR CURRENT I (mA) BASE-EMMITER VOLTAGE V (mV) C BE P T C /C V /V C a ob ib CB EB 600 300 f=1MHz I =0/I =0 E C C 500 ib T =25 a 100 400 30 C ob 300 10 200 3 100 0 1 0 25 50 75 100 125 150 -0.1 -1 -3 -10 -20 -0.3 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) a B,May,2012 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C CAPACITANCE C (pF) VOLTAGE V (V) CEsat BASE-EMITTER SATURATION COLLECTOR POWER DISSIPATION TRANSITION FREQUENCY f (MHz) DC CURRENT GAIN h T FE VOLTAGE V (mV) P (mW) BEsat C