JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A94 TRANSISTOR (PNP) 1.EMITTER FEATURES 2.BASE z High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -0.2 A C P Collector Power Dissipation 625 mW C R Thermal Resistance From Junction To ambient 200 /W JA T Junction Temperature 150 J T Storage Temperature -55~+150 stg ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit V I =-100A,I=0 -400 V Collector-base breakdown voltage (BR)CBO C E Collector-emitter breakdown voltage V I =-1mA,I=0 -400 V (BR)CEO C B Emitter-base breakdown voltage V I =-100A,I=0 -5 V (BR)EBO E C Collector cut-off current I V =-400V,I=0 -0.1 A CBO CB E Collector cut-off current I V =-400V,I=0 -5 A CEO CE B I V =-4V,I=0 -0.1 A Emitter cut-off current EBO EB C h V =-10V, I=-10mA 80 300 FE(1) CE C h V =-10V, I=-1mA 70 FE(2) CE C DC current gain h V =-10V, I=-100mA 60 FE(3) CE C h V =-10V, I=-50mA 80 FE(4) CE C V I =-10mA,I =-1mA -0.2 V CE(sat)(1) C B Collector-emitter saturation voltage V I =-50mA,I =-5mA -0.3 V CE(sat)(2) C B Base-emitter saturation voltage V I =-10mA,I=-1mA -0.75V BE(sat) C B Transition frequency f V =-20V, I=-10mA,f=30MHz 50 MHz T CE C CLASSIFICATION OF h FE(1) RANK A B1 B2 C RANGE 80-100 100-150 150-200 200-300 B,Dec,2010 Typical Characteristics A94 I V h I C CE FE C -1188 1000 COMMON EMITTER COMMON EMITTER 100uA-100uA T =25 V = -10V -1166 a CE -90uA90uA -1144 -80uA80uA T =100 a -1122 70uA-70uA -1100 -60uA60uA T =25 a 100 -50uA 50uA -88 40uA-40uA -66 -30uA 30uA -44 20uA-20uA -22 I =-10uA B -00 10 -200 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 -1 -10 -100 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V V I I BEsat CEsat C C -1000 -10 T =25 a -1 -500 T =100 a T =100 a -0.1 T =25 a =10 =10 -200 -0.01 -200 -1 -10 -100 -200 -1 -10 -100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V f I C BE T C 100 -200 -100 50 -10 COMMON EMITTER V = -20V COMMON EMITTER CE V =-10V T =25 CE a 10 -1 -0 -300 -600 -900 -1200 -5 -10 -100 BASE-EMMITER VO LTAGE V (mV) COLLECTOR CURRENT I (mA) BE C P T C /C V /V C a ob ib CB EB 700 300 f=1MHz I =0/I =0 E C 600 T =25 a 100 C ib 500 400 C ob 300 10 200 100 0 1 0 25 50 75 100 125 150 -0.1 -1 -10 -20 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a B,Dec,2010 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR CURRENT I (mA) C CAPACITANCE C (pF) T VOLTAGE V (V) COLLECTOR CURRENT I (mA) CEsat C COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION DC CURRENT GAIN h P (mW) VOLTAGE V (mV) TRANSITION FREQUENCY f (MHz) BEsat FE C T