JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTORPNP SOT-89-3L 1 2 3 FEATURE Low speed switching 1. BASE MARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnit 3. EMITTER V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -Continuous -3 A C P Collector Power Dissipation 0.5 W C R Thermal Resistance, Junction to Ambient 25 0 JA /W T Junction Temperature 150 j T Storage Temperature -55~150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =-100A ,I=0 -40 V (BR)CBO C E Collector-emitter breakdown voltage V I = -10mA , I=0 -30 V (BR)CEO C B Emitter-base breakdown voltage V I = -100A,I=0 -6 V (BR)EBO E C Collector cut-off current I V = -40V, I=0 -1 A CBO CB E Collector cut-off current I V =-30V, I=0 -10 A CEO CE B Emitter cut-off current I V =-6V, I=0 -1 A EBO EB C DC current gain h V = -2V, I = -1A 60 400 FE CE C Collector-emitter saturation voltage V I =-2A, I = -0.2A -0.5 V CE(sat) C B Base-emitter saturation voltage V I =-2A, I = -0.2A -1.5 V BE(sat) C B V = -5V, I =-0.1A CE C Transition frequency f MHz T 50 f =10MHz CLASSIFICATION OF h FE R O Y GR Rank Range 60-120 100-200 160-320 200-400 C,Dec,2013 Typical Characteristics B772 Static Characteristic h I FE C -1.8 10000 -7.5mA COMMON EMITTER COMMON EMITTER T =25 -1.6 -6.75mA V = -2V a CE -6.0mA -1.4 -5.25mA -1.2 1000 -4.5mA T =100 a -3.75mA -1.0 T =25 a -3.0mA -0.8 -2.25mA -0.6 100 -1.5mA -0.4 -0.2 I =-0.75mA B -0.0 10 -3000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -1 -10 -100 -1000 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I CEsat C BEsat C -1000 -1500 =10 =10 -1200 -900 -100 T =100 a T =25 a -600 T =25 a -10 T =100 a -1 -300 -3000 -3000 -1 -10 -100 -1000 -1 -10 -100 -1000 COLLECTOR CURRENT I (mA) COLLECTOR CURREMT I (mA) C C I V f I C BE T C 200 -3000 COMMON EMITTER -1000 V = -2V CE 100 -100 -10 -1 COMMON EMITTER V =-5V CE T =25 a -0.1 10 -300 -400 -500 -600 -700 -800 -900 -1000-1100-1200 -4.23 -10 -100 BASE-EMMITER VOLTAGE V (mV) COLLECTOR CURRENT I (mA) BE C P T C a 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a C,Dec,2013 T =100 a T =25 a COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION COLLECTOR CURRENT I (A) VOLTAGE V (mV) P (W) COLLECTOR CURRENT I (mA) C CEsat C C BASE-EMITTER SATURATION DC CURRENT GAIN h VOLTAGE V (mV) TRANSITION FREQUENCY f (MHz) FE BEsat T