JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC327/ BC328 TRANSISTOR (PNP) TO-92 FEATURES 1. COLLECTOR Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.BASE Symbol Parameter Value Unit 3. EMITTER V Collector-Base Voltage BC327 -50 CBO V BC328 -30 V Collector-Emitter Voltage BC327 -45 CEO V BC328 -25 V -5 EBO Emitter-Base Voltage V I Collector Current -Continuous -800 C mA P Collector Power Dissipation 625 C mW T Junction Temperature 150 j T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage I = -100uA, I =0 C E BC327 V -50 V CBO BC328 -30 Collector-emitter breakdown voltage I = -10mA , I =0 C B BC327 V -45 V CEO BC328 -25 Emitter-base breakdown voltage V I = -10uA, I=0 -5 V EBO E C Collector cut-off current BC327 I V = -45 V , I =0 -0.1 uA CBO CB E BC328 V = -25V , I =0 -0.1 CB E Collector cut-off current BC327 I V = -40 V , I =0 -0.2 uA CEO CE B BC328 V = -20 V , I =0 -0.2 CE B Emitter cut-off current I V = -4 V , I=0 -0.1 uA EBO EB C h V =-1 V, I = -100mA 100 630 FE(1) CE C DC current gain V =-1 V, I = -300mA 40 h FE(2) CE C Collector-emitter saturation voltage V I =-500mA, I = -50mA -0.7 V CE(sat) C B Base-emitter saturation voltage V I = -500mA, I=-50mA -1.2 V BE(sat) C B Base-emitter voltage V V =-1 V, I = -300mA -1.2 V BE CE C V = -5V, I = -10mA CE C Transition frequency f 260 MHz T f = 100MHz V =-10V,I =0 CB E Collector Output Capacitance Cob 12 pF f=1MHZ CLASSIFICATION OF h FE Rank 16 25 40 Range 100-250 160-400 250-630 B,Feb,2012Typical Characterisitics BC327/BC328 h I Static Characteristic FE C -300 1000 -1.0mA COMMON -0.9mA EMITTER T =100 a =25 T -0.8mA a -0.7mA T =25 -200 -0.6mA a -0.5mA 100 -0.4mA -0.3mA -100 -0.2mA I =-0.1mA COMMON EMITTER B V = -1V CE -0 10 -7 -800 -0 -2 -4 -6 -10 -100 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C -1 -2 -1 T =25 a T =100 a -0.1 T =100 a T =25 a =10 =10 -0.01 -0.1 -1 -10 -100 -800 -1 -10 -100 -800 -0.3 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V I f C BE C T 1000 -800 -100 -10 100 -1 COMMON EMITTER V =-5V CE COMMON EMITTER T =25 V =-1V a CE -0.1 10 -0.0 -0.3 -0.6 -0.9 -1.2 -5 -10 -100 BASE-EMMITER VOLTAGE V (V) COLLECTOR CURRENT I (mA) BE C C / C V / V P T ob ib CB EB C a 100 700 f=1MHz I =0/I =0 E C 600 T =25 a C ib 500 400 C ob 10 300 200 100 1 0 -0.1 -1 -10 -20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE T ( ) R a B,Feb,2012 T =100 a T =25 a COLLECTOR-EMITTER SATURATION VOLTAGE V (V) CEsat COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) CAPACITANCE C (pF) C C COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION P (mW) C TRANSITION FREQUENCY f (MHz) DC CURRENT GAIN h T FE VOLTAGE V (V) BEsat