JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.BASE Symbol Parameter Value Unit 3. EMITTER V Collector-Base Voltage BC337 50 CBO V BC338 30 V Collector-Emitter Voltage BC337 45 CEO V BC338 25 V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 800 mA C P Total Device Dissipation 625 mW D T Junction Temperature 150 j T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V I = 100uA, I =0 CBO C E BC337 50 V BC338 30 V Collector-emitter breakdown voltage I = 10mA , I =0 C B BC337 V 45 V CEO BC338 25 V Emitter-base breakdown voltage V I = 10uA, I =0 5 V EBO E C Collector cut-off current BC337 I V = 45V, I =0 0.1 CBO CB E uA BC338 V = 25V, I =0 0.1 CB E Collector cut-off current BC337 V = 40V, I =0 0.2 CE B I uA CEO BC338 V = 20V, I =0 0.2 CE B Emitter cut-off current I V = 4 V, I=0 0.1 uA EBO EB C BC337/BC338 100 630 BC337-16/BC338-16 100 250 h V =1V, I = 100mA FE(1) CE C BC337-25/BC338-25 160 400 BC337-40/BC338-40 250 630 DC current gain h V =1V, I = 300mA 60 FE(2) CE C Collector-emitter saturation voltage V I =500mA, I = 50mA 0.7 V CE(sat) C B Base-emitter saturation voltage V I = 500mA, I=50mA 1.2 V BE(sat) C B Base-emitter voltage V V =1V, I = 300mA 1.2 V BE CE C V = 5V, I = 10mA CE C Transition frequency f 210 MHz T f = 100MHz V =10V,I =0 CB E Collector Output Capacitance Cob 15 pF f=1MHZ www.cj-elec.com 1 E,Dec,2015 Typical Characteristics h I Static Characteristic FE C 250 1000 800uA COMMON 720uA EMITTER 640uA T =25 T =100 a a 200 560uA 480uA T =25 a 150 400uA 100 320uA 100 240uA 160uA 50 COMMON EMITTER I =80uA B V =3V CE 0 10 012 3456 110 100 800 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 1000 1000 T =25 a 100 T =100 a T =100 a T =25 a 10 =10 =10 1 100 1 10 100 110 100 800 800 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C C / C V / V f I ob ib CB EB C T 100 f=1MHz I =0/ I =0 E C C ib T =25 a 100 10 C ob COMMON EMITTER T =25 a V =5V CE 10 1 110 0.1 1 10 20 COLLECTOR CURRENT I (mA) REVERSE VOLTAGE V (V) C P T C a 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a www.cj-elec.com 2 E,Dec,2015 COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (mV) TRANSITION FREQUENCY f (MHz) CEsat P (mW) T COLLECTOR CURRENT I (mA) C C BASE-EMITTER SATURATION DC CURRENT GAIN h VOLTAGE V (mV) FE CAPACITANCE C (pF) BEsat