BC807-25 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC807 TRANSISTOR (PNP) SOT-23 FEATURE Ldeally suited for automatic insertion Epitaxial planar die construction 1. BASE Complementary NPN type available(BC817) 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -Continuous -0.5 A C P Collector Power Dissipation 0.3 W C T Junction Temperature 150 j T Storage Temperature -55-150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage V -50 V CBO I = -10A, I =0 C E Collector-emitter breakdown voltage V I = -10mA, I=0 -45 V CEO C B Emitter-base breakdown voltage V I = -1A, I =0 -5 V EBO E C Collector cut-off current I V = -45V, I=0 -0.1 CBO CB E A Collector cut-off current I V = -40V, I=0 A -0.2 CEO CE B Emitter cut-off current I V = -4 V, I=0 -0.1 EBO EB C A hFE(1) V = -1V, I= -100mA CE C 100 600 DC current gain V = -1V, I= -500mA hFE(2) CE C 40 Collector-emitter saturation voltage V (sat) I =-500mA, I = -50mA -0.7 V CE C B V Base-emitter saturation voltage V (sat) I = -500mA, I = -50mA -1.2 BE C B V = -5V, I = -10mA CE C Transition frequency 100 MHz f T f=100MHz CLASSIFICATION OF h FE (1) Rank BC807-16 BC807-25 BC807-40 Range 100-250 160-400 250-600 Marking 5A 5 5C B D,Aug,2013Typical Characteristics BC807 h I Static Characteristic FE C - 280 500 - -1mA COMMON o T =100 C EMITTER a - -0.9mA - 400 240 T =25 a -0.8mA - 200 -0.7mA 300 - o T =25 C -0.6mA a - 160 -0.5mA - 120 - 200 -0.4mA -0.3mA - 80 -0.2mA 40 - V = -1V I =-0.1mA CE B 0 - 100 - - - - 500 02468- - - 10 -12 -14 -16 -11-0 100 COLLECTOR CURRENT I (mA) COLLECTOR-EMITTER VOLTAGE V (V) C CE V I V I CEsat C BEsat C -1.2 -0.4 =10 =10 -1.0 -0.3 -0.8 T =25 a -0.2 -0.6 T =100 a T =100 a -0.1 -0.4 T =25 a -0.2 -0.0 -0.1 -1 -10 -100 - 500 -0.1 -1 -10 -100 - 500 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB -1000 100 f=1MHz I =0 / I =0 E C 50 o T =25 C a -100 C ib o T =100 C a -10 10 T =25 a -1 C ob V =-1V CE -0.1 1 0.3 0.4 - 0.5 0.6 0.7 0.8 - 0.9 1.0 05 -10 - - - - - - - (V) REVERSE VOLTAGE V (V) BASE-EMITTER VOLTAGE V BE f I P T T C c a 0.4 300 0.3 100 0.2 0.1 V =-5V CE o T =25 C a 10 0.0 110 - 60 0 25 50 75 100 125 150 - - AMBIENT TEMPERATURE T ( ) COLLECTOR CURRENT I (mA) a C D,Aug,2013 COLLECTOR CURRENT I (mA) BASE-EMITTER SATURATION C COLLECTOR CURRENT I (mA) TRANSITION FREQUENCY f (MHz) VOLTAGE V (V) C T BEsat COLLECTOR-EMITTER SATURATION COLLECTOR POWER DISSIPATION VOLTAGE V (V) DC CURRENT GAIN h P (W) CEsat FE CAPACITANCE C (pF) c