JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846 TRANSISTOR (NPN) SOT-23 BC847 BC848 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V V Collector-Base Voltage CBO BC846 80 50 BC847 30 BC848 V Collector-Emitter Voltage V CEO 65 BC846 BC847 45 30 BC848 V Emitter-Base Voltage 6 V EBO I Collector Current Continuous 0.1 A C P Collector Power Dissipation 200 mW C T Junction Temperature 150 J T Storage Temperature -55~+150 stg DEVICE MARKING BC846A=1A BC846B=1B BC847A=1E BC847B=1F BC847C=1G BC848A=1J BC848B=1K: BC848C=1L C,Jan,2014ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage BC846 80 V IBC847 = 10A, I =0 50 V CBO C E BC848 30 Collector-emitter breakdown voltage BC846 65 V IBC847 = 10mA, I =0 45 V CEO C B BC848 30 Emitter-base breakdown voltage V I = 10A, I=0 6 V EBO E C Collector cut-off current BC846 V =70 V , I =0 CB E I BC8V =47 50 V , I =0 0.1 CBO CB E A BC8V =48 30 V , I =0 CB E Collector cut-off current BC846 V =60 V , I =0 CE B I BC8V =47 45 V , I =0 0.1 A CEO CE B BC8V =48 30 V , I =0 CE B Emitter cut-off current I V =5 V , I=0 0.1 A EBO EB C DC current gain BC846A,847A,848A 110 220 BC846B,847B,848B h V = 5V, I = 2mA 200 450 FE CE C BC847C,BC848C 420 800 Collector-emitter saturation voltage V (sat) I =100mA, I = 5mA 0.5 V CE C B Base-emitter saturation voltage V (sat) I =100mA, I = 5mA 1.1 V BE C B V = 5 V, I = 10mA CE C Transition frequency f 100 MHz T f=100MHz Collector output capacitance C V =10V,f=1MHz 4.5 pF ob CB C,Jan,2014