BCP56-10 Changjing Electronics Technology

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 BCP54,55,56 TRANSISTOR (NPN) FEATURES z For AF driver and output stages 1. BASE z High collector current 2. COLLECTOR z Low collector-emitter saturation voltage 3. EMITTER z Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) BCP54 BCP55 BCP56 Symbol Parameter Unit V Collector-Base Voltage 45 60 100 V CBO V Collector-Emitter Voltage 45 60 80 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current -Continuous 1 A C P Collector Power Dissipation 1.5 W C R Thermal Resistance Junction to Ambient 83.3 /W JA T Storage Temperature Range -65~+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Symbol Test conditions Min Max Unit Parameter Collector-base breakdown voltage BCP54 45 BCP55 V I = 0.1mA,I =0 60 V (BR)CBO C E BCP56 100 Collector-emitter breakdown voltage BCP54 45 BCP55 V I = 10mA,I =0 60 V (BR)CEO C B BCP56 80 Base-emitter breakdown voltage V I = 10A,I=0 5 V (BR)EBO E C Collector cut-off current I V = 30 V, I=0 100 nA CBO CB E h V = 2V, I=5mA 25 FE(1) CE C DC current gain h V = 2V, I =150m A 63 250 FE(2) CE C h V = 2V, I =500m A 25 FE(3) CE C Collector-emitter saturation voltage V I =500mA,I=50mA 0.5 V CE(sat) C B V V =2V, I =500m A 1 V Base-emitter voltage BE CE C Transition frequency f V =10V,I=50mA,f=100MHz 100 MHz T CE C CLASSIFICATION OF h FE(2) Rank BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16 Range 63-160 100-250 Marking BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16 www.cj-elec.com 1 G,Jan,2017 Typical Characteristics hTypical Characteristics ha h I Static Characteristic FE C 250 1000 COMMON EMITTER COMMON V =2V CE EMITTER T =25 a 200 1.0mA T =100 300 0.9mA a 0.8mA 150 T =25 a 0.7mA 100 0.6mA 100 0.5mA 0.4mA 30 0.3mA 50 0.2mA I =0.1mA B 0 10 012 345 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE V (V) COLLECTOR CURRENT I (mA) CE C V I V I CEsat C BEsat C 1000 1.0 =10 =10 300 0.8 T =25 a 100 T =100 a T =100 a T =25 0.6 a 30 10 0.4 1 10 100 1000 1 10 100 1000 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C I V C / C V / V C BE ob ib CB EB 1000 300 COMMON EMITTER f=1MHz V =2V CE I =0/I =0 E C C ib T =25 100 a T =100 a 100 C ob 10 T =25 a 10 1 1 0.2 0.4 0.6 0.8 1.0 0.1 1 10 20 0.3 3 BASE-EMITTER VOLTAGE V (V) REVERSE BIAS VOLTAGE V (V) BE P T f I C a T C 1800 300 1500 100 1200 900 600 COMMON EMITTER 300 V =10V CE T =25 a 10 0 10 30 100 0 25 50 75 100 125 150 COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T ( ) C a G,Jan,2017 www.cj-elec.com 2 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C COLLECTOR-EMMITTER SATURATION C TRANSITION FREQUENCY f (MHz) T VOLTAGE V (mV) CEsat COLLECTOR POWER DISSIPATION CAPACITANCE C (pF) BASE-EMMITTER SATURATION DC CURRENT GAIN h FE P (mW) VOLTAGE V (V) C BEsat