JIANGSU CHANGJIANG ELECTRONI CS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors JC ( T SOT-23 BCW66 TRANSISTOR (NPN) FEATURES 1. BASE Complementary to BCW68 2. EMITTER 3. COLLECTOR BCW66 is subdivided into three groups F,G and H according to DC current gain MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage 75 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 800 mA C P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 /W JA T Junction Temperature 150 j T Storage Temperature -55+150 stg ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I = 10A, I =0 75 V (BR)CBO C E Collector-emitter breakdown voltage V I = 10mA, I =0 45 V (BR)CEO C B I =10A, I =0 Emitter-base breakdown voltage V E C 5 V (BR)EBO Collector cut-off current I V =45 V, I =0 0.02 CBO CB E A Collector cut-off current I V =4 V, I =0 0.02 A EBO EB C V =10V, I =0. 1mA BCW66F 35 CE C BCW66G h 50 FE1 BCW66H 80 V =1V, I = 10mA BCW66F 75 CE C h BCW66G 110 FE2 BCW66H 180 DC current gain V =1V, I =100mA BCW66F 100 250 CE C h BCW66G FE3 160 400 BCW66H 250 630 V =2V, I =500mA BCW66F 35 CE C BCW66G h 60 FE4 BCW66H 100 I =100mA, I =10mA 0.3 V C B Collector-emitter saturation voltage V (sat) CE I =500mA, I =50mA 0.7 V C B Base-emitter saturation voltage V (sat) I =500mA, I =50mA 2 V BE C B V =10V,I =20mA,f=100MHz Transition frequency f CE C 100 MHz T Output capacitance V =10V,I =0,f=1MHz 12 pF C CB E ob Input capacitance C V =0.5V,I =0,f=1MHz 80 pF EB E ib V =5V,I =0.2mA,f=1KHz, CE C Noise figure NF 10 dB Rs=1K ,BW=200Hz MARKING Rank F G H Range 100-250 160-400 250-630 Marking EF EG EH www.cj-elec.comwww.cj-elec.com 1 A,Jun,2014D,Oct,2014 Typical Characteristics h I Static Characteristic FE C 300 500 V = 1V CE COMMON EMITTER 250 720uA 640uA o T =25 800uA a T =100 C 400 a 560uA 480uA 200 400uA o 300 T =25 C a 150 320uA 200 240uA 100 160uA 100 50 I =80uA B 0 0 01234 5678 0.1 1 10 100 800 COLLECTOR CURRENT I (mA) C COLLECTOR-EMITTER VOLTAGE V (V) CE V I V I CEsat C BEsat C 1.2 400 =10 =10 1.0 300 0.8 T =25 a 0.6 200 0.4 T =100 a 100 T =100 a 0.2 T =25 a 0.0 0 800 0.1 1 10 100 800 0.1 1 10 100 COLLECTOR CURRENT I (mA) COLLECTOR CURRENT I (mA) C C C / C f V / V I ob ib T CB EB C 200 100 f=1MHz 180 I =0 / I =0 E C o T =25 C 160 a 140 120 C ib 100 10 80 C ob 60 40 V =10V CE 20 o T =25 C a 0 1 1 10 100 0.1 1 10 20 REVERSE VOLTAGE V (V) COLLECTOR CURRENT I (mA) C P T c a 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) a www.cj-elec.comwww.cj-elec.com 2 D,Oct,2014A,Jun,2014 COLLECTOR POWER DISSIPATION BASE-EMITTER SATURATION COLLECTOR CURRENT I (mA) C P (W) TRANSITION FREQUENCY f (MHz) T c VOLTAGE V (V) BEsat COLLECTOR-EMITTER SATURATION VOLTAGE V (mV) CEsat DC CURRENT GAIN h CAPACITANCE C (pF) FE