JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L BCX51,BCX52,BCX53 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR z NPN Complements to BCX54,BCX55,BCX56 z Low Voltage 3. EMITTER z High Current APPLICATIONS z Medium Power General Purposes z Driver Stages of Audio Amplifiers MARKING:BCX51:AA, BCX51-10:AC, BCX51-16:AD BCX52:AE, BCX52-10:AG, BCX52-16:AM BCX53:AH, BCX53-10:AK, BCX53-16:AL MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter ValueUnit BCX51 -45 V Collector-Base Voltage V CBO BCX52 -60 BCX53 -100 BCX51 -45 Collector-Emitter Voltage V V CEO BCX52 -60 BCX53 -80 V Emitter-Base Voltage -5 V EBO I Collector Current -1 A C P Collector Power Dissipation 500 mW C R Thermal Resistance From Junction To Ambient 250 /W JA T Junction Temperature 150 j T Storage Temperature -55~+150 stg www.cj-elec.com 1 E,Nov,2015ELECTRICAL CHARACTERISTICS (T =25 unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit BCX51 -45 Collector-base breakdown voltage V I =-100A,I =0 V (BR)CBO C E BCX52 -60 BCX53 -100 BCX51 -45 Collector-emitter breakdown voltage V I =-1 0mA,I =0 V (BR)CEO* C B BCX52 -60 BCX53 -80 Emitter-base breakdown voltage V I =-100A,I=0 -5 V (BR)EBO E C Collector cut-off current I V =-30V,I=0 -0.1 A CBO CB E Emitter cut-off current I V =-5V,I=0 -0.1 A EBO EB C h V =-2V, I=-5mA 63 FE(1)* CE C DC current gain h V =-2V, I=-150mA 63 250 FE(2)* CE C h V =-2V, I=-0.5A 40 FE(3)* CE C Collector-emitter saturation voltage V I =-0.5A,I =-50mA -0.5 V CE(sat)* C B Base -emitter voltage V V =-2V, I=-0.5A -1 V BE* CE C Transition frequency f VCE=-5V,IC=-10mA, f=100MHz 50 MHz T * Pulse Test CLASSIFICATION OF h FE(2) BCX51 BCX51-10 BCX51-16 BCX52 BCX52-10 BCX52-16 RANK BCX53 BCX53-10 BCX53-16 RANGE 63250 63160 100250 www.cj-elec.com 2 E,Nov,2015