X-On Electronics has gained recognition as a prominent supplier of CJ2324 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ2324 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJ2324 Changjing Electronics Technology

CJ2324 electronic component of Changjing Electronics Technology
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Part No.CJ2324
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: MOSFET N Trench 100V 2A 2.8V @ 250uA 234 mΩ @ 1.5A,10V SOT-23 (SOT-23-3) RoHS
Datasheet: CJ2324 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0665 ea
Line Total: USD 0.66 
Availability - 9098
Ship by Mon. 02 Dec to Thu. 05 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
9098
Ship by Mon. 02 Dec to Thu. 05 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0665
100 : USD 0.0548
300 : USD 0.049
3000 : USD 0.0387
6000 : USD 0.0352
9000 : USD 0.0335

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
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We are delighted to provide the CJ2324 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ2324 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs CJ2324 N-Channel MOSFET I V R MAX D SOT-23 (BR)DSS DS(on) 10 V 234m 267m 6V 10 0 V 2 A 1. GATE 278m 4.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z TrenchFET Power MOSFET z DC/DC Converters z Low R z Load Switch DS(ON) z Surface Mount Package z LED Backlighting in LCD TVs MARKING Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 2 A D Pulsed Drain Current I * 8 A DM Thermal Resistance from Junction to Ambient R 357 /W JA Junction Temperature T 150 J Storage Temperature T -55~+150 STG Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T 260 L *Repetitive rating Pluse width limited by junction temperature. www.cj-elec.com 1 A-3,Apr,2015MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 100 V Zero gate voltage drain current IDSS VDS =100V,VGS = 0V 1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage(note 1) VGS(th) VDS =V , ID =250A 1.2 2.8 V GS VGS =10V, ID =1.5A 234 m Drain-source on-resistance (note 1) RDS(on) VGS =6V, ID =1A 267 m VGS =4.5V, ID =0.5A 278 m Forward tranconductance (note 1) gFS VDS =20V, ID =1.5A 2 S Diode forward voltage (note 1) V I =1.3A, VGS = 0V 1.2 V SD S DYNAMIC PARAMETERS (note2) Input Capacitance C 190 pF iss pF Output Capacitance C VDS =50V,VGS =0V,f =1MHz 22 oss Reverse Transfer Capacitance C 13 pF rss Gate Resistance R F=1MHz 0.3 2.8 g SWITCHING PARAMETERS (note 2) Turn-on delay time td(on) 45 ns Turn-on rise time tr 39 ns V =50V,V =4.5V DD GEN R =39,R =1,I =1.3A Turn-off delay time td(off) L G D 26 ns Turn-off fall time tf 20 ns Total Gate Charge Q 5.8 nC g nC Gate-Source Charge Q VDS =50V,VGS =4.5V,ID=1.6A 0.75 gs Gate-Drain Charge Q 1.4 nC gd Notes : 1. Pulse Test : Pulse width 300s, duty cycle0.5%. 2. Guaranteed by design, not subject to production testing. www.cj-elec.com 2 A-3,Apr,2015

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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