JIANGSU CHANGJING ELECTRONJIANGSU CHANGJING ELECTRONICS TECHNOLOGYICS TECHNOLOGY CO., L CO., LTTD D SOTSOT-23 Plastic-Encap-23 Plastic-Encapsulate sulate MOSFETSMOSFETS CJ4459 P-Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-23 46m - 10 V - 3 0 V 3 -5 A 72m -4.5V 3 1 1. GATE 1 2 2 2. SOURCE DESCRIPTION 3. DRAIN The CJ4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This DS(ON) device is ideal for load switch and battery protection applications. Equivalent Circuit MARKING 4459 = Device cod e Solid dot = Green molding compound device, 4459 if none, the normal device MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -5.0 A D Pulsed Drain Current (note 1) I -30 A DM Power Dissipation (note 2) P 0.35 W D Thermal Resistance from Junction to Ambient (t 10s) (note 2) R 357 /W JA Junction Temperature T 150 J Storage Temperature T -55~ 150 STG Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -30 V Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage (note 3) VGS(th) VDS =V , ID =-250A -1.4 -2.0 -2.4 V GS VGS =-10V, ID =-5A 35 46 m Drain-source on-resistance (note 3) RDS(on) VGS =-4.5V, ID =-5A 55 72 m Forward tranconductance (note 3) gFS VDS =-5V, ID =-5A 14 S Diode forward voltage (note 3) V I =-1A, VGS = 0V -1 V SD S DYNAMIC PARAMETERS (note 4) Input Capacitance C 415 625 pF iss Output Capacitance C VDS =-15V,VGS =0V,f =1MHz 70 130 pF oss Reverse Transfer Capacitance C 40 90 pF rss SWITCHING PARAMETERS (note 4) Turn-on delay time td(on) 7.5 ns Turn-on rise time tr V =-10V,V =-15V, 5.5 ns GS DS R =2.5,R =3 Turn-off delay time td(off) L GEN 19 ns Turn-off fall time tf 7 ns Total Gate Charge (10V) Q 7.4 11 nC g Gate-Source Charge Q VDS =-15V,VGS =-10V,ID=-5A 1.3 1.9 nC gs Gate-Drain Charge Q 1.3 3.1 nC gd Notes : 1. Repetitive rating : Pulse width limited by junction temperature T =150. Ratings are based on low frequency and J(MAX) duty cycles to keep initial T =25.The power dissipation P is based on T =150, using 10s junction-to-ambient J D J(MAX) thermal resistance. 2. The value in any given application depends on the users specific board design. 3. Pulse Test: Pulse Width300s, Duty Cycle0.5%. 4. These parameters have no way to verify. www.jscj-elec.com Rev. - 1.0 2