X-On Electronics has gained recognition as a prominent supplier of CJ4459 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CJ4459 MOSFETs are a product manufactured by Changjing Electronics Technology. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CJ4459 Changjing Electronics Technology

CJ4459 electronic component of Changjing Electronics Technology
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Part No.CJ4459
Manufacturer: Changjing Electronics Technology
Category: MOSFETs
Description: 30V 5A 35mO@10V,5A 0.35W P Channel SOT-23 MOSFETs ROHS
Datasheet: CJ4459 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1257 ea
Line Total: USD 0.63 
Availability - 0
MOQ: 5  Multiples: 0
Pack Size: 0
Availability Price Quantity
0
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 5
Multiples : 0
5 : USD 0.1257
50 : USD 0.1051
150 : USD 0.0948
500 : USD 0.0869
3000 : USD 0.0808
6000 : USD 0.0776

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CJ4459 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CJ4459 and other electronic components in the MOSFETs category and beyond.

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JIANGSU CHANGJING ELECTRONJIANGSU CHANGJING ELECTRONICS TECHNOLOGYICS TECHNOLOGY CO., L CO., LTTD D SOTSOT-23 Plastic-Encap-23 Plastic-Encapsulate sulate MOSFETSMOSFETS CJ4459 P-Channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-23 46m - 10 V - 3 0 V 3 -5 A 72m -4.5V 3 1 1. GATE 1 2 2 2. SOURCE DESCRIPTION 3. DRAIN The CJ4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This DS(ON) device is ideal for load switch and battery protection applications. Equivalent Circuit MARKING 4459 = Device cod e Solid dot = Green molding compound device, 4459 if none, the normal device MAXIMUM RATINGS (T =25 unless otherwise noted) a Parameter Symbol Value Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I -5.0 A D Pulsed Drain Current (note 1) I -30 A DM Power Dissipation (note 2) P 0.35 W D Thermal Resistance from Junction to Ambient (t 10s) (note 2) R 357 /W JA Junction Temperature T 150 J Storage Temperature T -55~ 150 STG Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250A -30 V Zero gate voltage drain current IDSS VDS =-30V,VGS = 0V -1 A Gate-body leakage current IGSS VGS =20V, VDS = 0V 100 nA Gate threshold voltage (note 3) VGS(th) VDS =V , ID =-250A -1.4 -2.0 -2.4 V GS VGS =-10V, ID =-5A 35 46 m Drain-source on-resistance (note 3) RDS(on) VGS =-4.5V, ID =-5A 55 72 m Forward tranconductance (note 3) gFS VDS =-5V, ID =-5A 14 S Diode forward voltage (note 3) V I =-1A, VGS = 0V -1 V SD S DYNAMIC PARAMETERS (note 4) Input Capacitance C 415 625 pF iss Output Capacitance C VDS =-15V,VGS =0V,f =1MHz 70 130 pF oss Reverse Transfer Capacitance C 40 90 pF rss SWITCHING PARAMETERS (note 4) Turn-on delay time td(on) 7.5 ns Turn-on rise time tr V =-10V,V =-15V, 5.5 ns GS DS R =2.5,R =3 Turn-off delay time td(off) L GEN 19 ns Turn-off fall time tf 7 ns Total Gate Charge (10V) Q 7.4 11 nC g Gate-Source Charge Q VDS =-15V,VGS =-10V,ID=-5A 1.3 1.9 nC gs Gate-Drain Charge Q 1.3 3.1 nC gd Notes : 1. Repetitive rating : Pulse width limited by junction temperature T =150. Ratings are based on low frequency and J(MAX) duty cycles to keep initial T =25.The power dissipation P is based on T =150, using 10s junction-to-ambient J D J(MAX) thermal resistance. 2. The value in any given application depends on the users specific board design. 3. Pulse Test: Pulse Width300s, Duty Cycle0.5%. 4. These parameters have no way to verify. www.jscj-elec.com Rev. - 1.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
CJ
Jiangsu Changjing Electronics Technology
Jiangsu Changjing Electronics Technology Co., Ltd.
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