JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB25N04 N-Channel Power MOSFET I V R MAX D (BR)DSS DS(on) PDFNWB3.33.3-8L 10 V 9.5 m 40 V 25A 16m 4.5V DESCRIPTION The CJAB25N04 uses advanced trench technology and design to provide excellent R with low gate charge. It can be used in a DS(ON) wide variety of applications FEATURES High Power and current handing capability Good stability and uniformity with high E AS Load switch Excellent package for good heat dissipation High density cell design for ultra low R DS(ON) Lead free product is acquired APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits Power management MARKING EQUIVALENT CIRCUIT D D D D 8 7 6 5 CJAB25N04 = Part No. CJAB Solid dot=Pin1 indicator 25N04 XX XX=Date Code 1 2 3 4 S S S G MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 25 A D Pulsed Drain Current I 100 A DM (1) Single Pulsed Avalanche Energy E 141 mJ AS Power Dissipation P 3 W D Thermal Resistance from Junction to Ambient R 41.67 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 (1).E condition: V =15V,L=0.1mH, R =25, Starting T = 25C AS DD G J (2).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 40 V 1 Zero gate voltage drain current I VDS =30V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics (note1) Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.0 1.5 2.5 V GS VGS =10V, ID =10A 7.2 9.5 m Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =10A 10 16 m 36 Forward transconductance g VDS =5V, ID =20A S FS Dynamic characteristics (note 2) Input capacitance C 1980 iss VDS =25V,VGS =0V, Output capacitance C 155 pF oss f =1MHz Reverse transfer capacitance C 125 rss Switching characteristics (note 2) Total gate charge Q 48 g V =20V, V =10V, DS GS nC Gate-source charge Q 5.5 gs I =10A D Gate-drain charge Q gd 12.3 Turn-on delay time td 12 (on) Turn-on rise time tr 35 V =25V,ID=14A, DS ns V =10V,R =3 GS G Turn-off delay time td(off) 48 Turn-off fall time tf 11 Drain-Source Diode Characteristics Drain-source diode forward voltage(note1) V VGS =0V, I =10A 1.2 V SD S Continuous drain-source diode forward I 25 A S current Pulsed drain-source diode forward current I 100 A SM Notes: 1. Pulse Test : Pulse Width300s, duty cycle 2%. 2. Guaranteed by design, not subject to production. Rev. - 1.0 www.jscj-elec.com 2