JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB3.33.3-8L Plastic-Encapsulate MOSFETS CJAB40SN10 N-Channel Power MOSFET PDFNWB3.33.3-8L I V R TYP D (BR)DSS DS(on) 10V 8.5m 100V 40A 11m 4.5V DESCRIPTION The CJAB40SN10 uses SGT technology and design to provide excellent R with low gate charge. It can be used in DS(ON) a wide variety of applications . FEATURES Load switch Good stability and uniformity with high E AS High density cell design for ultra low R Excellent package for good heat DS(ON) dissipation Fully characterized avalanche voltage and current APPLICATIONS SMPS and general purpose applications Uninterruptible Power Supply Hard switched and high frequency circuits EQUIVALENT CIRCUIT MARKING D D D D 8 7 6 5 CJAB40SN10 = Part No. CJAB 40SN10 Solid dot=Pin1 indicator XX XX=Code 1 2 3 4 S S S G MAXIMUM RATINGS ( T =25 unless otherwise noted ) a Parameter Symbol Limit Unit Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 40 A D Pulsed Drain Current I 160 A DM Single Pulsed Avalanche Energy E 80 mJ AS Power Dissipation P 1.5 W D Thermal Resistance from Junction to Ambient R 83.3 /W JA Junction Temperature T 150 J Storage Temperature Range T -55 ~+150 stg Lead Temperature for Soldering Purposes(1/8 from case for 10s) TL 260 Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250A 100 V 1 Zero gate voltage drain current I VDS =80V, VGS =0V A DSS 100 Gate-body leakage current I VDS =0V, VGS =20V nA GSS On characteristics Gate-threshold voltage VGS(th) VDS =V , ID =250A 1.4 1.8 2.2 V GS VGS =10V, ID =12A 13 m 8.5 Static drain-source on-sate resistance RDS(on) VGS =4.5V, ID =9A 17 m 11 Dynamic characteristics Input capacitance C 1460 2920 iss VDS =50V,VGS =0V, Output capacitance C 280 560 pF oss f =1MHz Reverse transfer capacitance C 5.2 11 rss Gate resistance Rg f =1MHz 1.4 Switching characteristics Total gate charge Q 25 50 g V =50V, DS nC Gate-source charge Q 5.0 10 gs V =10V, I =20A GS D Gate-drain charge Q 6.5 13 gd Turn-on delay time td 6.5 13 (on) Turn-on rise time tr 4.5 9.0 V =50V,ID=20A, DS ns V =10V,R =10 GS G Turn-off delay time td(off) 19 38 Turn-off fall time tf 3.5 7.0 Drain-Source Diode Characteristics Drain-source diode forward voltage V VGS =0V, I =12A 1.2 V SD S Continuous drain-source diode forward I 40 A S current Pulsed drain-source diode forward current I 160 A SM Reverse Recovery Time t 42 ns rr V =50V, I =20A, R F dI /dt=500A/s F Reverse Recovery Charge Q nC rr 160 Notes: 1.T =25 Limited only by maximum temperature allowed. C 2.P 10s, Duty cycle1%. W 3.EAS condition: V =50V,V =10V, L=0.1mH, Rg=25 Starting T = 25. DD GS J 4.Pulse Test : Pulse Width300s, duty cycle 2%. 5.Guaranteed by design, not subject to production. 6.The value of R is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air T =25 . JA environment with a Rev. - 1.0 www.jscj-elec.com 2